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AGR19030EF PDF预览

AGR19030EF

更新时间: 2024-01-30 07:25:44
品牌 Logo 应用领域
TRIQUINT 晶体晶体管过程控制系统PCS放大器局域网
页数 文件大小 规格书
10页 329K
描述
30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

AGR19030EF 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.39
配置:SingleFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):87.5 W
子类别:FET General Purpose PowerBase Number Matches:1

AGR19030EF 数据手册

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AGR19030EF  
30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor  
Electrical Characteristics  
Table 1. Thermal Characteristics  
Parameter  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to Case  
RθJC  
2.0  
°C/W  
Table 2. Absolute Maximum Ratings*  
Parameter  
Drain-source Voltage  
Gate-source Voltage  
Symbol  
VDSS  
VGS  
PD  
Value  
65  
–0.5, 15  
87.5  
Unit  
Vdc  
Vdc  
W
Total Dissipation at TC = 25 °C  
Derate Above 25 °C  
Operating Junction Temperature  
Storage Temperature Range  
TJ  
TSTG  
0.5  
200  
–65, 150  
W/°C  
°C  
°C  
* Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only.  
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the  
data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.  
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.  
Table 3. dc Characteristics  
Parameter  
Symbol  
Min  
Typ Max  
Unit  
Off Characteristics  
150  
Drain-source Breakdown Voltage (VGS = 0 V, ID = 38 µA)  
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)  
Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V)  
On Characteristics  
V(BR)DSS  
IGSS  
65  
1
50  
Vdc  
µAdc  
µAdc  
IDSS  
Forward Transconductance (VDS = 10 V, ID = 0.4 A)  
Gate Threshold Voltage (VDS = 10 V, ID = 100 µA)  
Gate Quiescent Voltage (VDS = 28 V, ID = 300 mA)  
Drain-source On-voltage (VGS = 10 V, ID = 0.4 A)  
GFS  
2.4  
3.8  
0.3  
4.8  
S
VGS(TH)  
VGS(Q)  
VDS(ON)  
Vdc  
Vdc  
Vdc  

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