Datasheet > AGR19030EF

AGR19030EF

更新时间： 2024-01-16 01:04:02

品牌	Logo	应用领域
TRIQUINT		晶体晶体管过程控制系统 PCS 放大器局域网
页数	文件大小	规格书
10页	329K
描述
30 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

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AGR19030EF 技术参数

AGR19030EF

30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor

Typical Performance Characteristics (continued)

-10

-20

-30

-40

-50

-60

-70

IM3

ACP

POUT (W)Z

Test Conditions:

VDD = 28 Vdc, IDQ = 350 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 x N-CDMA, 2.5 MHz @ 1.2288 MHz BW, P/A = 9.72 dB @ 0.01% proba-

bility (CCDF), channel spacing (BW) ACPR: 885 kHz (30 kHz), IM3: 2.5 MHz (1.2288 MHz).

Figure 6. 2-Carrier N-CDMA ACPR, IM3 Power Gain, and Drain Efficiency vs. POUT

IDQ = 450 mA

= 400 mA

= 350 mA

IDQ = 300 mA

IDQ = 250 mA

POUT (dBm)Z

Test Conditions:

VDD = 28 Vdc, f1 = 1958.75 MHz, f2 = 1961.25 MHz, 2 carrier N-CDMA measurement.

Figure 7. 2-Carrier N-CDMA Power Gain vs. POUT

1...4 5 678 9 10

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