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AGP15-600HE3/73 PDF预览

AGP15-600HE3/73

更新时间： 2024-11-12 03:42:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 73K
描述
DIODE 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN, Rectifier Diode

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AGP15-600HE3/73 数据手册

 浏览型号AGP15-600HE3/73的Datasheet PDF文件第2页浏览型号AGP15-600HE3/73的Datasheet PDF文件第3页浏览型号AGP15-600HE3/73的Datasheet PDF文件第4页 
AGP15-400 thru AGP15-800  
Vishay General Semiconductor  
Glass Passivated Junction Plastic Controlled Avalanche Rectifier  
FEATURES  
• Superectifier structure for high reliability  
application  
SUPERECTIFIER®  
• Cavity-free glass-passivated junction  
• Controlled avalanche characteristics  
• Low forward voltage drop  
• Low leakage current, IR less than 0.1 μA  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
DO-204AC (DO-15)  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes application.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.5 A  
MECHANICAL DATA  
VRRM  
PRM  
IFSM  
IR  
400 V to 800 V  
500 W  
Case: DO-204AC, molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
50 A  
5.0 μA  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
VF  
1.1 V  
TJ max.  
175 °C  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
AGP15-400  
AGP15-600  
600  
AGP15-800  
800  
UNIT  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
400  
V
V
V
VRMS  
280  
420  
560  
Maximum DC blocking voltage  
VDC  
400  
600  
800  
Maximum peak power dissipation in the avalanche  
region 20 μs pulse  
PRM  
IAV  
500  
1.5  
50  
W
A
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TA = 55 °C  
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
A
Maximum full load reverse current, full cycle average  
0.375" (9.5 mm) lead length at TA = 55 °C  
IR(AV)  
100  
μA  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
Document Number: 88535  
Revision: 15-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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与AGP15-600HE3/73相关器件

型号 品牌 获取价格 描述 数据表
AGP15-600-HE3/73 VISHAY

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 		DIODE 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2
AGP15-800 VISHAY

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AGP15-800/100 VISHAY

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 		Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AC, PLAS
AGP15-800/100-E3 VISHAY

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 		DIODE 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Rectifier D
AGP15-800/4E VISHAY

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 		Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AC, PLAS
AGP15-800/4E-E3 VISHAY

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 		DIODE 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Rectifier D
AGP15-800/4F VISHAY

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 		Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AC, PLAS
AGP15-800/4F-E3 VISHAY

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 		DIODE 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Rectifier D
AGP15-800/4G VISHAY

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 		Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-204AC, PLAS
AGP15-800/4G-E3 VISHAY

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 		DIODE 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Rectifier D

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