Datasheet > AFV09P350-04N

AFV09P350-04N

更新时间： 2022-02-26 12:15:19

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
20页	505K
描述
RF Power LDMOS Transistors

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AFV09P350-04N 数据手册

Document Number: AFV09P350--04N

Rev. 0, 1/2014

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

AFV09P350--04NR3

AFV09P350--04GNR3

N--Channel Enhancement--Mode Lateral MOSFETs

These 100 W symmetrical Doherty RF power LDMOS transistors are

designed for cellular base station applications covering the frequency range of

720 to 960 MHz.



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 48 Vdc,

I_DQA= 860 mA, V_GSB= 0.9 Vdc, P_out= 100 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.

720–960 MHz, 100 W AVG., 48 V

AIRFAST RF POWER LDMOS

TRANSISTORS



Output PAR

(dB)

ACPR

(dBc)

Frequency

920 MHz

940 MHz

960 MHz

(dB)

19.5

19.2

(%)

48.5

49.5

48.0

7.2

7.1

7.0

–29.2

–32.0

–35.7

OM--780--4L

PLASTIC

AFV09P350--04NR3

Features



Production Tested in a Symmetrical Doherty Configuration

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

OM--780G--4L

PLASTIC

AFV09P350--04GNR3



Designed for Digital Predistortion Error Correction Systems

In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel.

Carrier

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

Peaking

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistors.

Figure 1. Pin Connections

AFV09P350--04NR3 AFV09P350--04GNR3

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...20

下载PDF

与AFV09P350-04N相关器件

型号	品牌	描述	获取价格	数据表
AFV09P350-04NR3	NXP	RF Power LDMOS Transistors	获取价格
AFV10700GS	NXP	RF Power LDMOS Transistors	获取价格
AFV10700H	NXP	RF Power LDMOS Transistors	获取价格
AFV10700HR5	NXP	RF Power Field-Effect Transistor	获取价格
AFV10700HS	NXP	RF Power LDMOS Transistors	获取价格
AFV10700S	NXP	Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V	获取价格