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ADR435TRZ-EP-R7

更新时间： 2024-11-01 14:40:47
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亚德诺 - ADI 光电二极管
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Ultralow Noise XFET® Voltage References with Current Sink and Source Capability

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Low Noise XFET Voltage References with  
Current Sink and Source Capability  
Data Sheet  
ADR431-EP/ADR434-EP/ADR435-EP  
FEATURES  
PIN CONFIGURATION  
Low noise (0.1 Hz to 10.0 Hz): 3.5 μV p-p at 2.5 VO typical  
(ADR431-EP)  
No external capacitor required  
ADR431-EP/  
ADR434-EP/  
ADR435-EP  
1
2
3
4
8
7
6
5
DNC  
DNC  
V
COMP  
IN  
V
NIC  
OUT  
TOP VIEW  
(Not to Scale)  
Low temperature coefficient  
TRIM  
GND  
5 ppm/°C maximum (ADR431-EP)  
NOTES  
3 ppm/°C maximum (ADR434-EP/ADR435-EP)  
Load regulation: 15 ppm/mA maximum  
Line regulation: 20 ppm/V maximum  
Wide supply voltage operating range: 4.5 V to 18 V  
(ADR431-EP)  
1. NIC = NOT INTERNALLY CONNECTED. THIS PIN IS NOT CONNECTED INTERNALLY.  
2. DNC = DO NOT CONNECT. DO NOT CONNECT TO THIS PIN.  
Figure 1. 8-Lead SOIC_N (R-8)  
High output source and sink current: +10 mA and −10 mA  
ENHANCED PRODUCT FEATURES  
Supports defense and aerospace applications, aerospace  
qualified electronic component (AQEC) standard  
Military temperature range: −55°C to +125°C  
Controlled manufacturing baseline  
One assembly and test site  
One fabrication site  
Enhanced product change notification  
Qualification data available on request  
APPLICATIONS  
Precision data acquisition systems  
High resolution data converters  
Optical control circuits  
Precision instruments  
GENERAL DESCRIPTION  
The ADR431-EP/ADR434-EP/ADR435-EP are XFET® voltage  
references featuring low noise, high accuracy, and low temperature  
drift performance. Using Analog Devices, Inc., patented temperature  
drift curvature correction and eXtra implanted junction FET  
(XFET) technology, voltage change vs. temperature nonlinearity  
in the ADR431-EP/ADR434-EP/ADR435-EP is minimized.  
The ADR431-EP/ADR434-EP/ADR435-EP have the capability to  
source up to +10 mA of output current and sink up to −10 mA.  
They also come with a trim terminal to adjust the output voltage  
over a 0.5% range without compromising performance.  
The ADR431-EP/ADR434-EP/ADR435-EP are available in an  
8-lead narrow SOIC package and are specified over the military  
temperature range of −55°C to +125°C.  
The XFET references operate at lower current (800 μA) and  
lower supply voltage headroom (2 V) than buried Zener  
references. Buried Zener references require more than 5 V  
headroom for operation. The ADR431-EP/ADR434-EP/  
ADR435-EP XFET references are optimal low noise solutions for  
5 V systems.  
Additional application and technical information can be found in  
the ADR430/ADR431/ADR433/ADR434/ADR435 data sheet.  
Table 1. Selection Guide  
Output  
Voltage (V) (mV)  
Accuracy Temperature  
Model  
Coefficient (ppm/°C)  
ADR431T-EP 2.500  
ADR434T-EP 4.096  
ADR435T-EP 5.000  
1.0  
1.5  
2.0  
5
3
3
Rev. B  
Document Feedback  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks arethe property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700 ©2010–2017 Analog Devices, Inc. All rights reserved.  
Technical Support  
www.analog.com  
 
 
 
 
 
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ADR435TRZ-EP-R7 替代型号

型号 品牌 替代类型 描述 数据表
ADR435TRZ-EP ADI

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 Ultralow Noise XFET® Voltage References with Current Sink and Source Capability

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