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ADR435TRZ-EP-R7

更新时间： 2024-02-18 09:56:39
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亚德诺 - ADI 光电二极管
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9页 195K
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Ultralow Noise XFET® Voltage References with Current Sink and Source Capability

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ADR435TRZ-EP-R7 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：SOP, SOP8,.25针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：1.29
模拟集成电路 - 其他类型：THREE TERMINAL VOLTAGE REFERENCEJESD-30 代码：R-PDSO-G8
JESD-609代码：e4长度：4.9 mm
湿度敏感等级：1功能数量：1
输出次数：1端子数量：8
最高工作温度：125 °C最低工作温度：-55 °C
最大输出电压：5.002 V最小输出电压：4.998 V
标称输出电压：5 V封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
座面最大高度：1.75 mm子类别：Voltage References
最大供电电压 (Vsup)：18 V最小供电电压 (Vsup)：7 V
标称供电电压 (Vsup)：8 V表面贴装：YES
最大电压温度系数：3 ppm/ °C温度等级：MILITARY
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：30微调/可调输出：YES
最大电压容差：0.04%宽度：3.9 mm
Base Number Matches：1

ADR435TRZ-EP-R7 数据手册

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Low Noise XFET Voltage References with  
Current Sink and Source Capability  
Data Sheet  
ADR431-EP/ADR434-EP/ADR435-EP  
FEATURES  
PIN CONFIGURATION  
Low noise (0.1 Hz to 10.0 Hz): 3.5 μV p-p at 2.5 VO typical  
(ADR431-EP)  
No external capacitor required  
ADR431-EP/  
ADR434-EP/  
ADR435-EP  
1
2
3
4
8
7
6
5
DNC  
DNC  
V
COMP  
IN  
V
NIC  
OUT  
TOP VIEW  
(Not to Scale)  
Low temperature coefficient  
TRIM  
GND  
5 ppm/°C maximum (ADR431-EP)  
NOTES  
3 ppm/°C maximum (ADR434-EP/ADR435-EP)  
Load regulation: 15 ppm/mA maximum  
Line regulation: 20 ppm/V maximum  
Wide supply voltage operating range: 4.5 V to 18 V  
(ADR431-EP)  
1. NIC = NOT INTERNALLY CONNECTED. THIS PIN IS NOT CONNECTED INTERNALLY.  
2. DNC = DO NOT CONNECT. DO NOT CONNECT TO THIS PIN.  
Figure 1. 8-Lead SOIC_N (R-8)  
High output source and sink current: +10 mA and −10 mA  
ENHANCED PRODUCT FEATURES  
Supports defense and aerospace applications, aerospace  
qualified electronic component (AQEC) standard  
Military temperature range: −55°C to +125°C  
Controlled manufacturing baseline  
One assembly and test site  
One fabrication site  
Enhanced product change notification  
Qualification data available on request  
APPLICATIONS  
Precision data acquisition systems  
High resolution data converters  
Optical control circuits  
Precision instruments  
GENERAL DESCRIPTION  
The ADR431-EP/ADR434-EP/ADR435-EP are XFET® voltage  
references featuring low noise, high accuracy, and low temperature  
drift performance. Using Analog Devices, Inc., patented temperature  
drift curvature correction and eXtra implanted junction FET  
(XFET) technology, voltage change vs. temperature nonlinearity  
in the ADR431-EP/ADR434-EP/ADR435-EP is minimized.  
The ADR431-EP/ADR434-EP/ADR435-EP have the capability to  
source up to +10 mA of output current and sink up to −10 mA.  
They also come with a trim terminal to adjust the output voltage  
over a 0.5% range without compromising performance.  
The ADR431-EP/ADR434-EP/ADR435-EP are available in an  
8-lead narrow SOIC package and are specified over the military  
temperature range of −55°C to +125°C.  
The XFET references operate at lower current (800 μA) and  
lower supply voltage headroom (2 V) than buried Zener  
references. Buried Zener references require more than 5 V  
headroom for operation. The ADR431-EP/ADR434-EP/  
ADR435-EP XFET references are optimal low noise solutions for  
5 V systems.  
Additional application and technical information can be found in  
the ADR430/ADR431/ADR433/ADR434/ADR435 data sheet.  
Table 1. Selection Guide  
Output  
Voltage (V) (mV)  
Accuracy Temperature  
Model  
Coefficient (ppm/°C)  
ADR431T-EP 2.500  
ADR434T-EP 4.096  
ADR435T-EP 5.000  
1.0  
1.5  
2.0  
5
3
3
Rev. B  
Document Feedback  
Information furnished by Analog Devices is believed to be accurate and reliable. However, no  
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other  
rights of third parties that may result from its use. Specifications subject to change without notice. No  
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.  
Trademarks and registeredtrademarks arethe property of their respective owners.  
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.  
Tel: 781.329.4700 ©2010–2017 Analog Devices, Inc. All rights reserved.  
Technical Support  
www.analog.com  
 
 
 
 
 
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ADR435TRZ-EP-R7 替代型号

型号 品牌 替代类型 描述 数据表
ADR435TRZ-EP ADI

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 Ultralow Noise XFET® Voltage References with Current Sink and Source Capability

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