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ADP3419JRM-REEL PDF预览

ADP3419JRM-REEL

更新时间: 2024-02-11 23:15:54
品牌 Logo 应用领域
安森美 - ONSEMI 驱动器接口集成电路光电二极管
页数 文件大小 规格书
13页 181K
描述
Dual Bootstrapped, High Voltage MOSFET Driver with Output Disable

ADP3419JRM-REEL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:MSOP
包装说明:LEAD FREE, MSOP-10针数:10
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.46
高边驱动器:YES接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:S-PDSO-G10JESD-609代码:e3
长度:3 mm湿度敏感等级:1
功能数量:1端子数量:10
最高工作温度:100 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP10,.19,20封装形状:SQUARE
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
座面最大高度:1.1 mm子类别:MOSFET Drivers
标称供电电压:5 V电源电压1-最大:26 V
电源电压1-分钟:4 V表面贴装:YES
温度等级:OTHER端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3 mm

ADP3419JRM-REEL 数据手册

 浏览型号ADP3419JRM-REEL的Datasheet PDF文件第2页浏览型号ADP3419JRM-REEL的Datasheet PDF文件第3页浏览型号ADP3419JRM-REEL的Datasheet PDF文件第4页浏览型号ADP3419JRM-REEL的Datasheet PDF文件第6页浏览型号ADP3419JRM-REEL的Datasheet PDF文件第7页浏览型号ADP3419JRM-REEL的Datasheet PDF文件第8页 
ADP3419  
ABSOLUTE MAXIMUM RATINGS  
Table 2.  
Parameter  
VCC  
BST  
BST to SW  
SW  
DRVH  
DRVL  
Stresses above those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. This is a stress  
rating only; functional operation of the device at these or any  
other conditions above those listed in the operational sections  
of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect  
device reliability.  
Rating  
−0.3 V to +7 V  
−0.3 V to +30 V  
−0.3 V to +7 V  
−3 V to +25 V  
SW − 0.3 V to BST + 0.3 V  
−0.3 V to VCC + 0.3 V  
−0.3 V to VCC + 0.3 V  
Unless otherwise specified, all voltages are referenced to GND.  
All Other Inputs and Outputs  
θJA  
2-Layer Board  
4-Layer Board  
340°C/W  
220°C/W  
Operating Ambient Temperature  
Range  
0°C to 100°C  
Junction Temperature Range  
Storage Temperature Range  
Lead Temperature Range  
Soldering (10 s)  
Vapor Phase (60 s)  
Infrared (15 s)  
0°C to 150°C  
−65°C to +150°C  
300°C  
215°C  
220°C  
ESD CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the  
human body and test equipment and can discharge without detection. Although this product features  
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy  
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance  
degradation or loss of functionality.  
Rev. 2 | Page 5 of 13 | www.onsemi.com  

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