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ADP1173AR-3.3-REEL PDF预览

ADP1173AR-3.3-REEL

更新时间: 2024-10-28 14:29:19
品牌 Logo 应用领域
亚德诺 - ADI 开关光电二极管
页数 文件大小 规格书
16页 476K
描述
IC 1.5 A SWITCHING REGULATOR, 32 kHz SWITCHING FREQ-MAX, PDSO8, PLASTIC, SO-8, Switching Regulator or Controller

ADP1173AR-3.3-REEL 数据手册

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ADP1173  
DIODE SELECTION  
In specifying a diode, consideration must be given to speed,  
forward voltage drop and reverse leakage current. When the  
ADP1173 switch turns off, the diode must turn on rapidly if  
high efficiency is to be maintained. Schottky rectifiers, as well as  
fast signal diodes such as the 1N4148, are appropriate. The  
forward voltage of the diode represents power that is not deliv-  
ered to the load, so VF must also be minimized. Again, Schottky  
diodes are recommended. Leakage current is especially impor-  
tant in low current applications, where the leakage can be a  
significant percentage of the total quiescent current.  
For most circuits, the 1N5818 is a suitable companion to the  
ADP1173. This diode has a VF of 0.5 V at 1 A, 4 µA to 10 µA  
leakage, and fast turn-on and turn-off times. A surface mount  
version, the MBRS130T3, is also available. For applications  
where the ADP1173 is “off” most of the time, such as when the  
load is intermittent, a silicon diode may provide higher overall  
efficiency due to lower leakage. For example, the 1N4933 has a  
1 A capability, but with a leakage current of less than 1 µA. The  
higher forward voltage of the 1N4933 reduces efficiency when  
the ADP1173 delivers power, but the lower leakage may outweigh  
the reduction in efficiency.  
Figure 11. Aluminum Electrolytic  
Figure 12. Tantalum Electrolytic  
Figure 13. OS-CON Capacitor  
For switch currents of 100 mA or less, a Schottky diode such as  
the BAT85 provides a VF of 0.8 V at 100 mA and leakage less  
than 1 µA. A similar device, the BAT54, is available in a SOT23  
package. Even lower leakage, in the 1 nA to 5 nA range, can be  
obtained with a 1N4148 signal diode.  
General purpose rectifiers, such as the 1N4001, are not suitable  
for ADP1173 circuits. These devices, which have turn-on times  
of 10 µs or more, are too slow for switching power supply  
applications. Using such a diode “just to get started” will result  
in wasted time and effort. Even if an ADP1173 circuit appears  
to function with a 1N4001, the resulting performance will not  
be indicative of the circuit performance when the correct diode  
is used.  
CIRCUIT OPERATION, STEP-UP (BOOST) MODE  
In boost mode, the ADP1173 produces an output voltage that  
is higher than the input voltage. For example, +12 V can be  
generated from a +5 V logic power supply or +5 V can be  
derived from two alkaline cells (+3 V).  
Figure 16 shows an ADP1173 configured for step-up operation.  
The collector of the internal power switch is connected to the  
output side of the inductor, while the emitter is connected to  
GND. When the switch turns on, pin SW1 is pulled near ground.  
This action forces a voltage across L1 equal to VIN–VCE(SAT),  
and current begins to flow through L1. This current reaches a  
final value (ignoring second-order effects) of:  
If low output ripple is important, the user should consider the  
ADP3000. This device switches at 400 kHz, and the higher  
switching frequency simplifies the design of the output filter.  
Consult the ADP3000 data sheet for additional details.  
All potential current paths must be considered when analyzing  
very low power applications, and this includes capacitor leakage  
current. OS-CON capacitors have leakage in the 5 µA to 10 µA  
range, which will reduce efficiency when the load is also in the  
microampere range. Tantalum capacitors, with typical leakage  
in the 1 µA to 5 µA range, are recommended for very low power  
applications.  
VIN V  
IPEAK  
CE(SAT ) ×23 µs  
L
where 23 µs is the ADP1173 switch’s “on” time.  
REV. 0  
–8–  

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