0.5 ꢀ CMOS
a
1.8 V to 5.5 V 2:1 Mux/SPDT Switches
ADG819/ADG820
FEATURES
FUNCTIONAL BLOCK DIAGRAM
Low On Resistance 0.8 ꢀ Max at 125ꢁC
0.25 ꢀ Max On Resistance Flatness
1.8 V to 5.5 V Single Supply
200 mA Current Carrying Capability
Automotive Temperature Range: –40ꢁC to +125ꢁC
Rail-to-Rail Operation
ADG819/
ADG820
S2
D
S1
IN
6-Lead SOT-23 Package, 8-Lead ꢂSOIC Package, and
6-Bump MicroCSP (Micro Chip Scale Package) ADG819
Fast Switching Times
SWITCHES SHOWN
FOR A LOGIC “1” INPUT
Typical Power Consumption (<0.01 ꢂW)
TTL-/CMOS-Compatible Inputs
Pin Compatible with the ADG719 (ADG819)
APPLICATIONS
Power Routing
Battery-Powered Systems
Communication Systems
Data Acquisition Systems
Cellular Phones
Modems
PCMCIA Cards
Hard Drives
Relay Replacement
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG819 and the ADG820 are monolithic, CMOS, SPDT
(single-pole, double-throw) switches. These switches are designed
on a submicron process that provides low power dissipation yet
gives high switching speed, low On resistance, and low leakage
currents.
1. Very low ON resistance, 0.5 Ω typical
2. 1.8 V to 5.5 V single-supply operation
3. High current carrying capability
4. Tiny 6-lead SOT-23 package, 8-lead µSOIC package,
and 2 × 3 bump 1.14 mm × 2.18 mm MicroCSP package
(ADG819 only)
Low power consumption and an operating supply range of 1.8 V
to 5.5 V make the ADG819 and ADG820 ideal for battery-pow-
ered, portable instruments.
Each switch of the ADG819 and the ADG820 conducts equally
well in both directions when on. The ADG819 exhibits break-
before-make switching action, thus preventing momentary shorting
when switching channels. The ADG820 exhibits make-before-
break action.
The ADG819 and the ADG820 are available in a 6-lead SOT-23
package and an 8-lead µSOIC package. The ADG819 is also
available in a 2 × 3 bump 1.14 mm × 2.18 mm MicroCSP
package. This chip occupies only a 1.14 mm × 2.18 mm area,
making it the ideal candidate for space-constrained applications.
REV. 0
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