1 pC Charge Injection, 100 pA Leakage,
CMOS, ± ± ꢀV/± ꢀV/+ ꢀ ꢁDaꢂ Sꢃꢁꢄ Sꢅitch
AꢁG6+6
FEATURES
FUNCTIONAL BLOCK DIAGRAM
1 pC charge injection
ADG636
4
S1A
±2.7 V to ±±.± V dual supply
+2.7 V to +±.± V single supply
Automotive temperature range: −40°C to +12±°C
100 pA (maximum at 2±°C) leakage currents
8± Ω typical on resistance
6
D1
5
S1B
S2A
S2B
11
10
9
D2
Rail-to-rail operation
Fast switching times
LOGIC
Typical power consumption (<0.1 μW)
TTL-/CMOS-compatible inputs
14-lead TSSOP package
1
14
2
A0
A1
EN
Figure 1.
APPLICATIONS
Automatic test equipment
Data acquisition systems
Battery-powered instruments
Communication systems
Sample-and-hold systems
Remote-powered equipment
Audio and video signal routing
Relay replacement
Avionics
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG636 is a monolithic device, comprising two indepen-
dently selectable CMOS single pole, double throw (SPDT)
switches. When on, each switch conducts equally well in both
directions.
ꢂ. Ultralow charge injection. QINJ: ±ꢂ.5 pC typical over the
full signal range.
±. Leakage current <0.±5 nA maximum at 85°C.
3. Dual ±±.ꢀ ꢁ to ±5 ꢁ or single +±.ꢀ ꢁ to +5.5 ꢁ supply.
4. Automotive temperature range: −40°C to +ꢂ±5°C.
5. Small ꢂ4-lead TSSOP package.
The ADG636 operates from a dual ±±.ꢀ ꢁ to ±5.5 ꢁ supply, or
from a single supply of +±.ꢀ ꢁ to +5.5 ꢁ.
This switch offers ultralow charge injection of ±ꢂ.5 pC over the
entire signal range and leakage current of ꢂ0 pA typical at ±5°C.
In addition, it offers on resistance of 85 Ω typical, which is matched
to within ± Ω between channels. The ADG636 also has low power
dissipation yet is capable of high switching speeds.
The ADG636 exhibits break-before-make switching action and
is available in a ꢂ4-lead TSSOP package.
Rev. B
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