Datasheet > ADF4360-2_12

ADF4360-2_12

更新时间： 2022-04-13 01:03:50

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
24页	589K
描述
Integrated Synthesizer and VCO

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ADF4360-2_12 数据手册

ADF4360-2

Data Sheet

ABSOLUTE MAXIMUM RATINGS

T_A= 25°C, unless otherwise noted.

Table 3.

Parameter

AV_DDto GND¹

Rating

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those included in the operational

sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

−0.3 V to +3.9 V

−0.3 V to +0.3 V

−0.3 V to +3.9 V

−0.3 V to +0.3 V

−0.3 V to V_DD+ 0.3 V

AV_DDto DV_DD

V_VCOto GND

V_VCOto AV_DD

Digital I/O Voltage to GND

Analog I/O Voltage to GND

REF_INto GND

Operating Temperature

Maximum Junction Temperature

CSP θ_JAThermal Impedance

Paddle Soldered

Paddle Not Soldered

Lead Temperature, Soldering Reflow

This device is a high performance RF integrated circuit with an

ESD rating of <1 kV; it is ESD sensitive. Proper precautions

should be taken for handling and assembly.

150°C

50°C/W

88°C/W

260°C

TRANSISTOR COUNT

¹GND = AGND = DGND = 0 V.

12,543 (CMOS) and 700 (Bipolar).

ESD CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the

human body and test equipment and can discharge without detection. Although this product features

proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy

electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance

degradation or loss of functionality.

Rev. C | Page 6 of 24

1...3 4 567 8 9...24

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