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ADF4169WCCPZ-RL7 PDF预览

ADF4169WCCPZ-RL7

更新时间: 2022-02-26 11:09:36
品牌 Logo 应用领域
亚德诺 - ADI /
页数 文件大小 规格书
36页 675K
描述
Direct Modulation/Fast Waveform Generating, Fractional-N Frequency Synthesizer

ADF4169WCCPZ-RL7 数据手册

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ADF4169  
Data Sheet  
Parameter1  
Min  
Typ  
Max  
Unit  
Test Conditions/Comments  
NOISE CHARACTERISTICS  
Normalized Phase Noise Floor3  
Phase-locked loop (PLL) bandwidth (BW) =  
1 MHz  
Integer-N Mode  
Fractional-N Mode  
Normalized 1/f Noise (PN1_f)4  
−224  
−217  
−120  
dBc/Hz  
dBc/Hz  
dBc/Hz  
FRAC = 0; see Σ-Δ Modulator Mode section  
Measured at 10 kHz offset, normalized  
to 1 GHz  
At the voltage controlled oscillator (VCO)  
output  
Phase Noise Performance5  
12,002 MHz Output6  
−96  
dBc/Hz  
At 50 kHz offset, 100 MHz PFD frequency  
1 Operating temperature: −40°C to +125°C.  
2 Guaranteed by design. Sample tested to ensure compliance.  
3 This specification can be used to calculate phase noise for any application. Use the formula ((Normalized Phase Noise Floor) + 10 log(fPFD) + 20 logN) to calculate  
in-band phase noise performance as seen at the VCO output.  
4 The PLL phase noise is composed of flicker (1/f) noise plus the normalized PLL noise floor. The formula for calculating the 1/f noise contribution at an RF frequency (fRF  
and at an offset frequency (f) is given by PN = PN1_f + 10 log(10 kHz/f) + 20 log(fRF/1 GHz). Both the normalized phase noise floor and flicker noise are modeled in  
ADIsimPLL™.  
)
5 The phase noise performance is measured with a modified EV-ADF4159EB3Z evaluation board and the Rohde & Schwarz® FSUP signal source analyzer.  
6 fREFIN = 100 MHz, fPFD = 100 MHz, offset frequency = 50 kHz, RFOUT = 12,002 MHz, N = 120.02, and loop bandwidth = 250 kHz.  
TIMING SPECIFICATIONS  
AVDD = VP = 2.7 V to 3.45 V, DVDD = SDVDD = 1.9 V, AGND = DGND = SDGND = CPGND = 0 V, TA = TMIN to TMAX, dBm referred to 50 Ω,  
unless otherwise noted.  
Table 2. Write Timing  
Parameter  
Limit at TMIN to TMAX  
Unit  
Description  
t1  
t2  
t3  
t4  
t5  
t6  
t7  
20  
10  
10  
25  
25  
10  
20  
ns min  
ns min  
ns min  
ns min  
ns min  
ns min  
ns min  
LE setup time  
DATA to CLK setup time  
DATA to CLK hold time  
CLK high duration  
CLK low duration  
CLK to LE setup time  
LE pulse width  
Write Timing Diagram  
t4  
t5  
CLK  
t2  
t3  
DB2  
(CONTROL BIT C3)  
DB1  
DB0 (LSB)  
(CONTRO BIT C1)  
DB30  
DATA  
DB31 (MSB)  
(CONTROL BIT C2)  
L
t7  
t1  
LE  
t6  
Figure 2. Write Timing Diagram  
Rev. 0 | Page 4 of 36  
 
 
 

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