Datasheet > ADF4158_18

ADF4158_18

更新时间： 2022-02-26 14:07:29

品牌	Logo	应用领域
亚德诺 - ADI		/
页数	文件大小	规格书
35页	561K
描述
Direct Modulation/Waveform Generating Fractional-N Frequency Synthesizer

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ADF4158_18 数据手册

ADF4158

Data Sheet

SPECIFICATIONS

AV_DD= DV_DD= 2.7 V to 3.3 V, V_P= AV_DDto 5.5 V, AGND = DGND = 0 V, T_A= T_MINto T_MAX, dBm referred to 50 Ω, unless

otherwise noted.

Table 1.

C Version¹

Parameter

Min

Typ

Max

Unit

Test Conditions/Comments

RF CHARACTERISTICS

RF Input Frequency (RF_IN)

0.5

6.1

GHz

−10 dBm minimum to 0 dBm maximum; for lower

frequencies, ensure slew rate (SR) > 400 V/µs

−15 dBm minimum to 0 dBm maximum for 2 GHz to 4

GHz RF input frequency

REFERENCE CHARACTERISTICS

REF_INInput Frequency

260

MHz

For f < 10 MHz, use a dc-coupled CMOS-compatible

square wave, slew rate > 25 V/µs

AV_DD

MHz

V p-p

If an internal reference doubler is enabled

Biased at AV_DD/2²

REF_INInput Sensitivity

REF_INInput Capacitance

REF_INInput Current

PHASE DETECTOR

Phase Detector Frequency³

CHARGE PUMP

0.4

100

µA

MHz

I_CPSink/Source

Programmable

High Value

Low Value

Absolute Accuracy

R_SETRange

I_CPThree-State Leakage Current

Matching

I_CPvs. V_CP

I_CPvs. Temperature

LOGIC INPUTS

V_INH, Input High Voltage

V_INL, Input Low Voltage

I_INH/I_INL, Input Current

C_IN, Input Capacitance

LOGIC OUTPUTS

V_OH, Output High Voltage

I_OH, Output High Current

V_OL, Output Low Voltage

POWER SUPPLIES

AV_DD

µA

kΩ

With R_SET= 5.1 kΩ

312.5

2.5

With R_SET= 5.1 kΩ

2.7

1.4

Sink and source current

0.5 V < V_CP< V_P– 0.5 V

V_CP= V_P/2

µA

0.6

1.4

V_DD− 0.4

µA

Open-drain output chosen; 1 kΩ pull-up to 1.8 V

CMOS output chosen

100

0.4

I_OL= 500 µA

2.7

3.3

DV_DD

V_P

I_DD

AV_DD

5.5

Rev. I | Page 4 of 35

1 2 345 6 7...35

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