ADA-4643-TR1G

更新时间： 2024-11-04 03:17:47

品牌	Logo	应用领域
安捷伦 - AGILENT		射频和微波射频放大器微波放大器
页数	文件大小	规格书
10页	111K
描述
Silicon Bipolar Darlington Amplifier

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中文翻译

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技术参数
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ADA-4643-TR1G 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	SOT-343R	Reach Compliance Code：	unknown
风险等级：	5.1	其他特性：	HIGH RELIABILITY
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	15.5 dB	最大输入功率 (CW)：	18 dBm
JESD-609代码：	e3	功能数量：	1
最大工作频率：	2500 MHz	最小工作频率：
封装主体材料：	PLASTIC/EPOXY	封装等效代码：	SOT-343R
电源：	3.5 V	射频/微波设备类型：	WIDE BAND LOW POWER
子类别：	RF/Microwave Amplifiers	技术：	BIPOLAR
端子面层：	Tin (Sn)	最大电压驻波比：	1.6
Base Number Matches：	1

ADA-4643-TR1G 数据手册

Agilent ADA-4643

Silicon Bipolar Darlington Amplifier

Data Sheet

Features

• Small Signal gain amplifier

• Operating frequency DC – 2.5 GHz

• Unconditionally stable

Surface Mount Package

Description

• 50 Ohms input & output

Agilent Technologies’ ADA-4643

is an economical, easy-to-use,

general purpose silicon bipolar

RFIC gain block amplifiers

housed in a 4-lead SC-70

(SOT-343) surface mount plastic

package which requires only half

the board space of a SOT-143

package.

SOT-343

• Flat, Broadband Frequency

Response up to 1 GHz

• Operating Current: 20 to 60 mA

• Industry standard SOT-343 package

• Lead-free option available

Specifications

900 MHz, 3.5V, 35 mA (typ.)

Pin Connections and

Package Marking

The Darlington feedback struc-

ture provides inherent broad

bandwidth performance, result-

ing in useful operating frequency

up to 2.5 GHz. This is an ideal

device for small-signal gain

• 17 dB associated gain

RFout

& Vd

• 13.4 dBm P_1dB

GND

• 28.3 dBm OIP₃

• 4 dB noise figure

GND

RFin

• VSWR < 2.2 throughput operating

cascades or IF amplification.

frequency

Note:

Top View. Package marking provides orientation

and identification.

• Single supply, typical I_d= 35 mA

ADA-4643 is fabricated using

Agilent’s HP25 silicon bipolar

process, which employs a double-

diffused single polysilicon

“2T” = Device Code

“x” = Date code character

identifies month of manufacture.

Applications

• Cellular/PCS/WLL base stations

process with self-aligned

• Wireless data/WLAN

• Fiber-optic systems

• ISM

submicron emitter geometry. The

process is capable of simulta-

neous high f_Tand high NPN

breakdown (25 GHz f_Tat 6V

BVCEO). The process utilizes

industry standard device oxide

isolation technologies and

submicron aluminum multilayer

interconnect to achieve superior

performance, high uniformity,

and proven reliability.

Typical Biasing Configuration

V_CC

bypass

= 5 V

- V

RFC

Attention:

block

Observe precautions for

handling electrostatic

sensitive devices.

input

2Tx

output

= 3.5 V

block

ESD Machine Model (Class A)

ESD Human Body Model (Class 1B)

Refer to Agilent Application Note A004R:

Electrostatic Discharge Damage and Control.

12 3 4 5 6 7...10

中文翻译

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与ADA-4643-TR1G相关器件

型号	品牌	获取价格	描述	数据表
ADA-4643-TR2	AGILENT	获取价格	Silicon Bipolar Darlington Amplifier
ADA-4643-TR2G	AGILENT	获取价格	Silicon Bipolar Darlington Amplifier
ADA4661-2	ADI	获取价格	18 V, Precision, 725 A, 4 MHz, CMOS RRIO Operational Amplifier
ADA4661-2ACPZ-R7	ADI	获取价格	18 V, Precision, 725 A, 4 MHz, CMOS RRIO Operational Amplifier
ADA4661-2ACPZ-RL	ADI	获取价格	18 V, Precision, 725 A, 4 MHz, CMOS RRIO Operational Amplifier
ADA4661-2ARMZ	ADI	获取价格	18 V, Precision, 725 A, 4 MHz, CMOS RRIO Operational Amplifier
ADA4661-2ARMZ-R7	ADI	获取价格	18 V, Precision, 725 A, 4 MHz, CMOS RRIO Operational Amplifier
ADA4661-2ARMZ-RL	ADI	获取价格	18 V, Precision, 725 A, 4 MHz, CMOS RRIO Operational Amplifier
ADA4665-2	ADI	获取价格	Operational Amplifiers Selection Guide
ADA4665-2_16	ADI	获取价格	16 V, 1 MHz, CMOS Rail-to-Rail Input/Output Operational Amplifier

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