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AD8402AN10 PDF预览

AD8402AN10

更新时间: 2024-01-16 12:31:01
品牌 Logo 应用领域
亚德诺 - ADI 转换器电位器数字电位计电阻器光电二极管
页数 文件大小 规格书
20页 497K
描述
1-/2-/4-Channel Digital Potentiometers

AD8402AN10 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DIP
包装说明:DIP,针数:14
Reach Compliance Code:unknown风险等级:5.78
其他特性:IT CAN ALSO OPERATE FROM A 5V NOMINAL SUPPLY标称带宽:0.6 kHz
控制接口:3-WIRE SERIAL转换器类型:DIGITAL POTENTIOMETER
JESD-30 代码:R-PDIP-T14JESD-609代码:e0
长度:19.05 mm湿度敏感等级:NOT APPLICABLE
功能数量:2位置数:256
端子数量:14最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:COMMERCIAL电阻定律:LINEAR
最大电阻器端电压:5.5 V最小电阻器端电压:
座面最大高度:5.33 mm标称供电电压:3 V
表面贴装:NO标称温度系数:500 ppm/ °C
温度等级:AUTOMOTIVE端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT APPLICABLE
标称总电阻:10000 Ω宽度:7.62 mm
Base Number Matches:1

AD8402AN10 数据手册

 浏览型号AD8402AN10的Datasheet PDF文件第1页浏览型号AD8402AN10的Datasheet PDF文件第2页浏览型号AD8402AN10的Datasheet PDF文件第3页浏览型号AD8402AN10的Datasheet PDF文件第5页浏览型号AD8402AN10的Datasheet PDF文件第6页浏览型号AD8402AN10的Datasheet PDF文件第7页 
AD8400/AD8402/AD8403–SPECIFICATIONS  
1 kVERSION  
ELECTRICAL CHARACTERISTICS otherwise noted)  
(VDD = +3 V ؎ 10% or + 5 V ؎ 10%, VA = +VDD, VB = 0 V, –40؇C TA +85؇C unless  
Parameter  
Symbol  
Conditions  
Min  
Typ1  
Max  
Units  
DC CHARACTERISTICS RHEOSTAT MODE Specifications Apply to All VRs  
Resistor Differential NL2  
Resistor Nonlinearity2  
Nominal Resistance3  
Resistance Tempco  
Wiper Resistance  
Nominal Resistance Match  
R-DNL  
R-INL  
R
RAB/T  
RW  
RWB, VA = NC  
RWB, VA = NC  
TA = +25°C, Model: AD840XYY1  
VAB = VDD, Wiper = No Connect  
IW = 1 V/RAB  
–5  
–4  
0.8  
–1  
+3  
+4  
1.5  
LSB  
LSB  
kΩ  
ppm/°C  
±1.5  
1.2  
700  
53  
100  
2
R/RO  
CH 1 to 2, VAB = VDD, TA = +25°C  
0.75  
%
DC CHARACTERISTICS POTENTIOMETER DIVIDER Specifications Apply to All VRs  
Resolution  
N
8
Bits  
Integral Nonlinearity4  
Differential Nonlinearity4  
INL  
DNL  
DNL  
–6  
–4  
–5  
±2  
–1.5  
–2  
25  
–12  
6
+6  
+2  
+5  
LSB  
LSB  
LSB  
ppm/°C  
LSB  
LSB  
VDD = +5 V  
VDD = +3 V, TA = +25°C  
Code = 80H  
Code = FFH  
Code = 00H  
Voltage Divider Temperature Coefficent VW/T  
Full-Scale Error  
Zero-Scale Error  
VWFSE  
VWZSE  
–20  
0
0
10  
RESISTOR TERMINALS  
Voltage Range5  
VA, B, W  
CA, B  
CW  
IDD_SD  
RW_SD  
0
VDD  
V
Capacitance6 Ax, Bx  
Capacitance6 Wx  
f = 1 MHz, Measured to GND, Code = 80H  
f = 1 MHz, Measured to GND, Code = 80H  
VA = VDD, VB = 0 V, SHDN = 0  
75  
pF  
pF  
µA  
120  
0.01  
50  
Shutdown Supply Current7  
Shutdown Wiper Resistance  
5
100  
VA = VDD, VB = 0 V, SHDN = 0, VDD = +5 V  
DIGITAL INPUTS & OUTPUTS  
Input Logic High  
Input Logic Low  
Input Logic High  
Input Logic Low  
VIH  
VIL  
VIH  
VIL  
VOH  
VOL  
IIL  
VDD = +5 V  
VDD = +5 V  
VDD = +3 V  
VDD = +3 V  
RL = 1 kto VDD  
IOL = 1.6 mA, VDD = +5 V  
VIN = 0 V or +5 V, VDD = +5 V  
2.4  
V
V
V
V
V
V
µA  
pF  
0.8  
0.6  
2.1  
Output Logic High  
Output Logic Low  
Input Current  
VDD–0.1  
0.4  
±1  
Input Capacitance6  
CIL  
5
POWER SUPPLIES  
Power Supply Range  
VDD Range  
IDD  
IDD  
PDISS  
PSS  
2.7  
5.5  
5
4
V
Supply Current (CMOS)  
Supply Current (TTL)8  
Power Dissipation (CMOS)9  
Power Supply Sensitivity  
VIH = VDD or VIL = 0 V  
0.01  
0.9  
µA  
mA  
µW  
VIH = 2.4 V or 0.8 V, VDD = +5.5 V  
VIH = VDD or VIL = 0 V, VDD = +5.5 V  
VDD = +5 V ± 10%  
27.5  
0.0035 0.008 %/%  
PSS  
VDD = +3 V ± 10%  
0.05  
0.13  
%/%  
DYNAMIC CHARACTERISTICS6, 10  
Bandwidth –3 dB  
Total Harmonic Distortion  
BW_1K  
THDW  
tS  
eNWB  
CT  
R = 1 kΩ  
5,000  
0.015  
0.5  
3
–65  
kHz  
%
µs  
nV/Hz  
dB  
VA = 1 V rms + 2 V dc, VB = 2 V dc, f = 1 kHz  
VA = VDD, VB = 0 V, ±1% Error Band  
RWB = 500 , f = 1 kHz, RS = 0  
VA = VDD, VB = 0 V  
V
W Settling Time  
Resistor Noise Voltage  
Crosstalk11  
NOTES FOR 1 kVERSION  
1 Typicals represent average readings at +25°C and VDD = +5 V.  
2 Resistor position nonlinearity error R-INL is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper  
positions. R-DNL measures the relative step change from ideal between successive tap positions. See Figure 30 test circuit.  
IW = 500 µA for VDD = +3 V and IW = 4 mA for VDD = +5 V for 1 kversion.  
3 VAB = VDD, Wiper (VW) = No Connect.  
4 INL and DNL are measured at VW with the RDAC configured as a potentiometer divider similar to a voltage output D/A converter. VA = VDD and VB = 0 V.  
DNL Specification limits of ±1 LSB maximum are Guaranteed Monotonic operating conditions. See Figure 29 test circuit.  
5 Resistor terminals A, B, W have no limitations on polarity with respect to each other.  
6 Guaranteed by design and not subject to production test. Resistor-terminal capacitance tests are measured with 2.5 V bias on the measured terminal. The remaining  
resistor terminals are left open circuit.  
7 Measured at the Ax terminals. All Ax terminals are open circuited in shutdown mode.  
8Worst case supply current consumed when input logic level at 2.4 V, standard characteristic of CMOS logic. See Figure 21 for a plot of I DD versus logic voltage.  
9 PDISS is calculated from (IDD × VDD). CMOS logic level inputs result in minimum power dissipation.  
10 All Dynamic Characteristics use VDD = +5 V.  
11 Measured at a VW pin where an adjacent VW pin is making a full-scale voltage change.  
Specifications subject to change without notice.  
REV. B  
–4–  

AD8402AN10 替代型号

型号 品牌 替代类型 描述 数据表
AD8402ANZ10 ADI

完全替代

1-/2-/4-Channel Digital Potentiometers
MCP42010-E/P MICROCHIP

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