AD5231BRUZ50-REEL7

更新时间： 2024-02-14 11:40:52

品牌	Logo	应用领域
亚德诺 - ADI		数字电位计存储
页数	文件大小	规格书
28页	536K
描述
Nonvolatile Memory, 1024-Position Digital Potentiometer

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中文翻译

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数据手册

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AD5231BRUZ50-REEL7 数据手册

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AD5231

Data Sheet

Lifetime Specification (A117) at a specific junction temperature

(T_J= 55°C). As part of this qualification procedure, the

Flash/EE memory is cycled to its specified endurance limit,

described previously, before data retention is characterized.

This means that the Flash/EE memory is guaranteed to retain

its data for its full specified retention lifetime every time the

Flash/EE memory is reprogrammed. It should also be noted

that retention lifetime, based on an activation energy of 0.6 eV,

derates with T_J, as shown in Figure 45. For example, the data is

retained for 100 years at 55°C operation, but reduces to 15 years

at 85°C operation. Beyond these limits, the part must be

reprogrammed so that the data can be restored.

FLASH/EEMEM RELIABILITY

The Flash/EE memory array on the AD5231 is fully qualified

for two key Flash/EE memory characteristics, namely Flash/EE

memory cycling endurance and Flash/EE memory data

retention.

Endurance quantifies the ability of the Flash/EE memory to be

cycled through many program, read, and erase cycles. In real

terms, a single endurance cycle is composed of four

independent, sequential events. These events are defined as

•

Initial page erase sequence

Read/verify sequence

Byte program sequence

Second read/verify sequence

300

250

200

During reliability qualification, Flash/EE memory is cycled

from 0x000 to 0x3FF until a first fail is recorded signifying the

endurance limit of the on-chip Flash/EE memory.

ANALOG DEVICES

150

As indicated in the Specifications section, the AD5231 Flash/EE

memory endurance qualification has been carried out in

accordance with JEDEC Specification A117 over the industrial

temperature range of −40°C to +85°C. The results allow the

specification of a minimum endurance figure over supply and

temperature of 100,000 cycles, with an endurance figure of

700,000 cycles being typical of operation at 25°C.

TYPICAL PERFORMANCE

AT T = 55°C

100

T JUNCTIONTEMPERATURE (°C)

100

110

Retention quantifies the ability of the Flash/EE memory to

retain its programmed data over time. Again, the AD5231 has

been qualified in accordance with the formal JEDEC Retention

Figure 45. Flash/EE Memory Data Retention

Rev. D | Page 22 of 28

1...19 20 212223 24 25...28

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与AD5231BRUZ50-REEL7相关器件

型号	品牌	描述	获取价格	数据表
AD5232	ADI	8-Bit Dual Nonvolatile Memory Digital Potentiometer	获取价格
AD5232BRU10	ADI	8-Bit Dual Nonvolatile Memory Digital Potentiometer	获取价格
AD5232BRU100	ADI	8-Bit Dual Nonvolatile Memory Digital Potentiometer	获取价格
AD5232BRU100-REEL7	ADI	8-Bit Dual Nonvolatile Memory Digital Potentiometer	获取价格
AD5232BRU10-REEL7	ADI	8-Bit Dual Nonvolatile Memory Digital Potentiometer	获取价格
AD5232BRU50	ADI	8-Bit Dual Nonvolatile Memory Digital Potentiometer	获取价格
AD5232BRU50-REEL7	ADI	8-Bit Dual Nonvolatile Memory Digital Potentiometer	获取价格
AD5232BRUZ10	ADI	Nonvolatile Memory,Dual 256-Position Digital Potentiometer	获取价格
AD5232BRUZ100	ADI	Nonvolatile Memory,Dual 256-Position Digital Potentiometer	获取价格
AD5232BRUZ100-REEL7	ADI	IC DUAL 100K DIGITAL POTENTIOMETER, 3-WIRE SERIAL CONTROL INTERFACE, 256 POSITIONS, PDSO16	获取价格
AD5232BRUZ100-RL7	ADI	Nonvolatile Memory,Dual 256-Position Digital Potentiometer	获取价格
AD5232BRUZ10-REEL7	ADI	Nonvolatile Memory,Dual 256-Position Digital Potentiometer	获取价格
AD5232BRUZ50	ADI	Nonvolatile Memory,Dual 256-Position Digital Potentiometer	获取价格
AD5232BRUZ50-REEL7	ADI	Nonvolatile Memory,Dual 256-Position Digital Potentiometer	获取价格
AD5233	ADI	2-Channel, 256-Position Digital Potentiometer	获取价格
AD5233BRU10	ADI	Nonvolatile Memory Digital Potentiometers	获取价格
AD5233BRU100	ADI	Nonvolatile Memory Digital Potentiometers	获取价格
AD5233BRU100-REEL7	ADI	Nonvolatile Memory Digital Potentiometers	获取价格
AD5233BRU10-REEL7	ADI	Nonvolatile Memory Digital Potentiometers	获取价格
AD5233BRU50	ADI	Nonvolatile Memory Digital Potentiometers	获取价格

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