Datasheet > AD50N06S-Q1

AD50N06S-Q1

更新时间： 2024-10-15 18:07:11

品牌	Logo	应用领域
安邦 - ANBON		/
页数	文件大小	规格书
6页	1618K
描述
TO-252AB

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中文翻译

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数据手册

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AD50N06S-Q1 数据手册

AD50N06S-Q1

N-Channel Enhancement Mode Power MOSFET

Product Summary

V_(BR)DSS

R_DS(on)MAX

I_D

60V

20mΩ@10V

50A

Feature

Application



High density cell design for ultra low Rdson

Power switching application

Fully characterized avalanche voltage and current

Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

Suffix“-Q1”for AEC-Q101

Hard switched and high frequency circuits

Uninterruptible power supply

Package

Circuit diagram

TO-252AB

Marking

D50N06

XXXXX

Document ID

AS-1150114

Issued Date

2003/03/08

Revised Date

2012/05/16

Revision

Page.

Page 1

12 3 4 5 6

中文翻译

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