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ACT-S512K32N-045P1Q PDF预览

ACT-S512K32N-045P1Q

更新时间: 2024-02-27 19:07:12
品牌 Logo 应用领域
其他 - ETC 静态存储器
页数 文件大小 规格书
9页 351K
描述
x32 SRAM Module

ACT-S512K32N-045P1Q 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:PGA, PGA66,11X11Reach Compliance Code:unknown
风险等级:5.88最长访问时间:45 ns
I/O 类型:COMMONJESD-30 代码:S-XPGA-P66
JESD-609代码:e0内存密度:16777216 bit
内存集成电路类型:SRAM MODULE内存宽度:32
端子数量:66字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:512KX32输出特性:3-STATE
封装主体材料:CERAMIC封装代码:PGA
封装等效代码:PGA66,11X11封装形状:SQUARE
封装形式:GRID ARRAY并行/串行:PARALLEL
电源:5 V认证状态:Not Qualified
筛选级别:38535Q/M;38534H;883B最大待机电流:0.0085 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.75 mA标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子节距:2.54 mm
端子位置:PERPENDICULARBase Number Matches:1

ACT-S512K32N-045P1Q 数据手册

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ACT–S512K32 High Speed  
16 Megabit SRAM Multichip Module  
Features  
4 Low Power CMOS 512K x 8 SRAMs in one MCM  
Factory configured as 512K x 32; User configurable as 1M x 16 or 2M x 8  
Input and Output TTL & CMOS Compatible Design  
Fast 17,20,25,35,45,55ns Access Times  
Full Commercial, Industrial and Military (-55°C to +125°C)  
Temperature Range  
MIL-PRF-38534 Compliant MCMs Available  
+5 V Power Supply  
Available in two Surface Mount Packages, and two PGA Type Package  
68–Lead, Low Profile CQFP(F1), 1.56"SQ x .140"max  
CIRCUIT TECHNOLOGY  
www.aeroflex.com  
General Description  
The ACT–S512K32 is a High  
Speed, 16 megabit CMOS  
SRAM  
Multichip  
Module  
(MCM) designed for full  
temperature range industrial,  
military, or space, mass  
memory and fast cache  
applications.  
68–Lead, Dual-Cavity CQFP(F2), 0.88"SQ x .20"max  
(.18 max thickness available, contact factory for details)  
(Drops into the 68 Lead JEDEC .99"SQ CQFJ footprint)  
68–Lead, Single-Cavity CQFP (F18), .94"SQ x .140"max (Drops into the 68  
Lead JEDEC .99"SQ CQFJ footprint)  
66 Pin, 1.38" x 1.38" x .245" PGA Type, Aeroflex code# "P1"  
66 Pin, 1.09" x 1.09" x .185" PGA Type, With Shoulder, Aeroflex code# "P7"  
The MCM can be organized  
as a 512K x 32 bit, 1M x 16 bit  
or 2M x 8 bit device and is  
Internal Decoupling Capacitors  
DESC SMD# 5962–94611 Released (F1,F2,F18,P1,P7)  
input  
and  
output  
TTL  
compatible. Writing is executed  
when the write enable (WE)  
and chip enable (CE) inputs  
are low and output enable (OE)  
input is high. Reading is  
accomplished when WE is high  
and CE and OE are both low.  
Access time grades of 17ns,  
20ns, 25ns, 35ns, 45ns and  
55ns maximum are standard  
high speed versions.  
Block Diagram – PGA Type Package (P1,P7) & CQFP (F2,F18)  
Pin Description  
WE1 CE1 WE2 CE2 WE3 CE3 WE4 CE4  
I/O0-31  
Data I/O  
A0–18 Address Inputs  
WE1–4 Write Enables  
CE1–4 Chip Enables  
A0 – A18  
OE  
512Kx8  
512Kx8  
512Kx8  
512Kx8  
OE  
Vcc  
GND  
NC  
Output Enable  
Power Supply  
Ground  
The +5 Volt power supply  
version is standard and +3.3  
Volt lower power model is a  
future optional product.  
8
8
8
8
Not Connected  
I/O0-7  
I/O8-15  
I/O16-23  
I/O24-31  
Block Diagram – CQFP(F1)  
The products are designed  
for  
operation  
over  
the  
Pin Description  
temperature range of -55°C to  
+125°C and under the full  
military environment. DESC  
Standard Military Drawing  
(SMD) numbers are released.  
I/O0-31  
Data I/O  
CE1  
CE2  
CE3  
CE4  
WE  
OE  
A0 – A18  
A0–18 Address Inputs  
WE  
Write Enable  
CE1–4 Chip Enables  
512Kx8  
512Kx8  
512Kx8  
512Kx8  
The  
ACT-S512K32  
is  
OE  
Vcc  
GND  
NC  
Output Enable  
Power Supply  
Ground  
manufactured in Aeroflex’s  
80,000  
square  
foot  
8
8
8
8
MIL-PRF-38534  
certified  
facility in Plainview, N.Y.  
Not Connected  
I/O0-7  
I/O8-15  
I/O16-23  
I/O24-31  
eroflex Circuit Technology - Advanced Multichip Modules © SCD1660 REV D 5/21/01  

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