ACS110-7SN/SB2
ABSOLUTE RATINGS (limiting values)
For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage
Symbol
Parameter
Value
700
1
Unit
V
V
DRM / VRRM Repetitive peak off-state voltage
Tj = -10 °C
IT(RMS)
ITSM
RMS on-state current full cycle sine wave SOT-223 Ttab = 105 °C
50 to 60 Hz
A
DIL-8
Tlead = 110 °C
F =50 Hz
Non repetitive surge peak on-state current
Tj initial = 25°C, full cycle sine wave
8
11
A
A
F =60 Hz
I2t
Fusing capability
tp = 10ms
F = 120 Hz
0.35
50
A²s
A/µs
Tj = 125°C
dI/dt
Repetitive on-state current critical rate of
rise IG = 10mA (tr < 100ns)
note 1
VPP
Tstg
Tj
Non repetitive line peak pulse voltage
Storage temperature range
2
kV
°C
°C
°C
- 40 to + 150
- 30 to + 125
260
Operating junction temperature range
Tl
Maximum lead soldering temperature during 10s
Note 1: according to test described by IEC61000-4-5 standard & Figure 3.
GATE CHARACTERISTICS (maximum values)
Symbol
PG (AV)
IGM
Parameter
Average gate power dissipation
Value
Unit
W
0.1
1
Peak gate current (tp = 20µs)
A
VGM
Peak positive gate voltage (in respect to pin COM)
5
V
THERMAL RESISTANCES
Symbol
Parameter
Value
60
Unit
°C/W
°C/W
°C/W
°C/W
Rth (j-a)
Junction to ambient S = 5cm²
SOT-223
DIL-8
60
Rth (j-l)
Junction to tab/lead for full cycle sine wave conduction
SOT-223
DIL-8
20
15
S = Copper surface under Tab
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