Datasheet > ACJT01V-800TW

ACJT01V-800TW

更新时间： 2024-11-14 14:53:55

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
10页	1129K
描述
瞬态抑制型双向可控硅

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数据手册

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ACJT01V-800TW 数据手册

JIEJIE MICROELECTRONICS CO., LTD.

ACJT01V-800TW 1A TRIAC

Rev.A.1.0

DESCRIPTION:

The ACJT01V-800TW triac is suitable for general purpose

AC switching. It can be used as an ON/OFF function in

applications such as heating regulation, induction motor

starting circuits, for phase control operation in light

dimmers, motor speed controllers. The ACJT01V-800TW

embeds a TVS structure to absorb the inductive turn-off

energy such as those described in the IEC 61000-4-5

standards. Package SOT-223 is RoHS compliant.

MAIN FEATURES

Symbol

I_T(RMS)

Value

Unit

V_DRM/V_RRM

800

5/5/5

I_{GT / /}

Ⅰ Ⅱ Ⅲ

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

T_stg

Value

-40-150

-40-125

800

Unit

℃

Storage junction temperature range

Operating junction temperature range

Repetitive peak off-state voltage (T_j=25℃)

Repetitive peak reverse voltage (T_j=25℃)

RMS on-state current (T_C≤89℃)

T_j

V_DRM

V_RRM

I_T(RMS)

800

Non repetitive surge peak on-state current

(full cycle , t_p=20ms , T_j=25℃)

Non repetitive surge peak on-state current

(full cycle , t_p=16.6ms , T_j=25℃)

I_TSM

16.5

1.25

I²t value for fusing (t_p=10ms , T_j=25℃)

I²t

A²s

Critical rate of rise of on-state current

(I_G=2×I_GT, f=100Hz , T_j=125℃)

dI/dt

A/μs

Peak gate current (t_p=20μs , T_j=125℃)

Average gate power dissipation (T_j=125℃)

Peak gate power

I_GM

P_G(AV)

P_GM

0.1

TEL：+86-513-68528666

http://www.jjwdz.com

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中文翻译

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