Datasheet > ACE24AC512ETMUH

ACE24AC512ETMUH

更新时间： 2024-11-06 02:48:35

品牌	Logo	应用领域
ACE		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
18页	1294K
描述
Two-wire Serial EEPROM

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ACE24AC512ETMUH 数据手册

ACE24AC512E

Two-wire Serial EEPROM

Description

The ACE24AC512E series are 524,288 bits of serial Electrical Erasable and Programmable Read Only

Memory, commonly known as EEPROM. They are organized as 65,536 words of 8 bits (one byte) each.

The devices are fabricated with proprietary advanced CMOS process for low power and low voltage

applications. These devices are available in standard 8-lead DIP, 8-lead SOP, 8-lead MSOP, 8-lead

TSSOP and 8-lead USON3*2-8 packages. A standard 2-wire serial interface is used to address all read

and write functions. Our extended V_CCrange (1.8V to 5.5V) devices enables wide spectrum of

applications.

Features

⚫

Low voltage and low power operations:

ACE24AC512E: V_CC= 1.8V to 5.5V

⚫

Maximum Standby current < 1µA

128 bytes page write mode.

Partial page write operation allowed.

Internally organized: 65,536 × 8 (512K).

Standard 2-wire bi-directional serial interface.

Schmitt trigger, filtered inputs for noise protection.

Self-timed Write Cycle (5ms maximum).

1 MHz (2.5-5.5V), 400 kHz (1.8V) Compatibility.

Automatic erase before write operation.

Write protect pin for hardware data protection.

High reliability: typically 1,000,000 cycles endurance.

100 years data retention.

Industrial temperature range (-40℃to 85℃).

Standard 8-lead DIP/SOP/MSOP/TSSOP/ USON3*2-8 Pb-free packages.

Absolute Maximum Ratings

Industrial operating temperature:

-40℃ to 85℃

-50℃to 125℃

-0.3V to V_CC+ 0.3V

Storage temperature:

Input voltage on any pin relative to ground:

Maximum voltage:

ESD Protection on all pins:

>4000V

Notice: Stresses exceed those listed under “Absolute Maximum Rating” may cause permanent damage to the device. Functional

operation of the device at conditions beyond those listed in the specification is not guaranteed. Prolonged exposure to extreme

conditions may affect device reliability or functionality.

VER 1.1

12 3 4 5 6 7...18

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