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AB28F800B5T80

更新时间： 2024-02-10 00:04:20

品牌	Logo	应用领域
英特尔 - INTEL		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
44页	344K
描述
5 VOLT BOOT BLOCK FLASH MEMORY

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技术参数
数据手册

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AB28F800B5T80 技术参数

生命周期：	Obsolete	零件包装代码：	SOIC
包装说明：	SOP,	针数：	44
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.51	风险等级：	5.78
最长访问时间：	80 ns	其他特性：	CONFG AS 512K X 16; TOP BOOT BLOCK
启动块：	TOP	JESD-30 代码：	R-PDSO-G44
长度：	28.2 mm	内存密度：	8388608 bit
内存集成电路类型：	FLASH	内存宽度：	8
功能数量：	1	端子数量：	44
字数：	1048576 words	字数代码：	1000000
工作模式：	ASYNCHRONOUS	最高工作温度：	125 °C
最低工作温度：	-40 °C	组织：	1MX8
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
并行/串行：	PARALLEL	编程电压：	5 V
认证状态：	Not Qualified	座面最大高度：	2.95 mm
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	AUTOMOTIVE
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	宽度：	13.3 mm
Base Number Matches：	1

AB28F800B5T80 数据手册

28F200B5, 28F004/400B5, 28F800B5

Table 2. Pin Descriptions

Name and Function

Symbol

Type

ADDRESS INPUTS for memory addresses. Addresses are internally latched

during a write cycle.

A₀–A₁₈

INPUT

28F200: A[0–16], 28F400: A[0–17], 28F800: A[0–18], 28F004: A[0–18]

A₉

INPUT

ADDRESS INPUT: When A₉is at V_HHthe signature mode is accessed. During

this mode, A₀decodes between the manufacturer and device IDs. When BYTE#

is at a logic low, only the lower byte of the signatures are read. DQ₁₅/A_–1is a

don’t care in the signature mode when BYTE# is low.

DQ₀–DQ₇

INPUT/ DATA INPUTS/OUTPUTS: Inputs array data on the second CE# and WE# cycle

OUTPUT during a Program command. Inputs commands to the Command User Interface

when CE# and WE# are active. Data is internally latched during the write cycle.

Outputs array, intelligent identifier and status register data. The data pins float to

tri-state when the chip is de-selected or the outputs are disabled.

DQ₈–DQ₁₅

INPUT/ DATA INPUTS/OUTPUTS: Inputs array data on the second CE# and WE# cycle

OUTPUT during a Program command. Data is internally latched during the write cycle.

Outputs array data. The data pins float to tri-state when the chip is de-selected or

the outputs are disabled as in the byte-wide mode (BYTE# = “0”). In the byte-wide

mode DQ₁₅/A_–1becomes the lowest order address for data output on DQ₀–DQ₇.

Not applicable to 28F004B5.

CE#

INPUT

CHIP ENABLE: Activates the device’s control logic, input buffers, decoders and

sense amplifiers. CE# is active low. CE# high de-selects the memory device and

reduces power consumption to standby levels. If CE# and RP# are high, but not

at a CMOS high level, the standby current will increase due to current flow

through the CE# and RP# input stages.

OE#

WE#

INPUT

OUTPUT ENABLE: Enables the device’s outputs through the data buffers during

a read cycle. OE# is active low.

WRITE ENABLE: Controls writes to the command register and array blocks. WE#

is active low. Addresses and data are latched on the rising edge of the WE#

pulse.

RP#

INPUT

RESET/DEEP POWER-DOWN: Uses three voltage levels (V_IL, V_IH, and V_HH) to

control two different functions: reset/deep power-down mode and boot block

unlocking. It is backwards-compatible with the BX/BL/BV products.

When RP# is at logic low, the device is in reset/deep power-down mode,

which puts the outputs at High-Z, resets the Write State Machine, and draws

minimum current.

When RP# is at logic high, the device is in standard operation. When RP#

transitions from logic-low to logic-high, the device defaults to the read array mode.

When RP# is at V_HH, the boot block is unlocked and can be programmed or

erased. This overrides any control from the WP# input.

PRELIMINARY

1...4 5 678 9 10...44

中文翻译

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与AB28F800B5T80相关器件

型号	品牌	获取价格	描述	数据表
AB28F800B5T90	INTEL	获取价格	5 VOLT BOOT BLOCK FLASH MEMORY
AB28F800B5T90	NUMONYX	获取价格	Flash, 1MX8, 90ns, PDSO44, 0.525 X 1.110 INCH, PLASTIC, SOP-44
AB28F800BR-B90	INTEL	获取价格	Flash, 1MX8, 90ns, PDSO44, 0.525 X 1.110 INCH, PLASTIC, SOP-44
AB28F800BR-T90	INTEL	获取价格	Flash, 1MX8, 90ns, PDSO44, 0.525 X 1.110 INCH, PLASTIC, SOP-44
AB28S	MDD	获取价格	SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS
AB2-A0-03-630-122-C	Carling Technologies	获取价格	Magnetic Circuit Breaker,
AB2-A0-03-630-122-E	Carling Technologies	获取价格	Magnetic Circuit Breaker,
AB2-A0-03-630-1D1-C	Carling Technologies	获取价格	Magnetic Circuit Breaker,
AB2-A0-03-630-1D2-C	Carling Technologies	获取价格	Magnetic Circuit Breaker,
AB2-A0-03-630-5D1-C	Carling Technologies	获取价格	Magnetic Circuit Breaker,

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