Datasheet > AAT3680ITP-4.2-T1

AAT3680ITP-4.2-T1

更新时间： 2024-02-12 21:30:27

品牌	Logo	应用领域
AAT		电池光电二极管控制器
页数	文件大小	规格书
18页	213K
描述
Lithium-Ion/Polymer Linear Battery Charge Controller

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AAT3680ITP-4.2-T1 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	TSOJ, TSSOJ12,.11,20	Reach Compliance Code：	unknown
风险等级：	5.84	JESD-30 代码：	R-PDSO-J12
湿度敏感等级：	1	端子数量：	12
最高工作温度：	70 °C	最低工作温度：	-20 °C
封装主体材料：	PLASTIC/EPOXY	封装代码：	TSOJ
封装等效代码：	TSSOJ12,.11,20	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE	电源：	4.5/12 V
认证状态：	Not Qualified	子类别：	Power Management Circuits
最大供电电流 (Isup)：	3 mA	表面贴装：	YES
温度等级：	COMMERCIAL	端子形式：	J BEND
端子节距：	0.5 mm	端子位置：	DUAL
Base Number Matches：	1

AAT3680ITP-4.2-T1 数据手册

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AAT3680

Lithium-Ion/Polymer

Linear Battery Charge Controller

with a P-channel MOSFET. If there is no other pro-

tection in the system, a shorted input could dis-

charge the battery through the body diode of the

pass MOSFET. If a reverse-blocking diode is

added to the system, a device should be chosen

which can withstand the maximum constant cur-

rent charge current at the maximum system ambi-

ent temperature.

Where:

P_D(MIN)= Minimum power rating for a diode selection

V_F

= Diode forward voltage

I_CC

= Constant current charge level for the

system

Schottky Diodes

Schottky diodes are selected for this application

because they have a low forward voltage drop, typ-

ically between 0.3V and 0.4V. A lower V_Fpermits

a lower voltage drop at the constant current charge

level set by the system; less power will be dissi-

pated in this element of the circuit. Schottky

diodes allow for lower power dissipation, smaller

component package sizes, and greater circuit lay-

out densities.

Diode Selection

Typically, a Schottky diode is used in reverse current

blocking applications with the AAT3680. Other

lower cost rectifier type diodes may also be used if

sufficient input power supply headroom is available.

The blocking diode selection should based on mer-

its of the device forward voltage (V_F), current rat-

ing, and input supply level versus the maximum

battery charge voltage and cost.

Rectifier Diodes

First, determine the minimum diode forward voltage

drop requirement. Refer to the following equation:

Any general-purpose rectifier diode can be used

with the AAT3680 application circuit in place of a

higher cost Schottky diode. The design trade-off is

that a rectifier diode has a high forward voltage

drop. V_Ffor a typical silicon rectifier diode is in the

range of 0.7V. A higher V_Fwill place an input sup-

ply voltage requirement for the battery charger sys-

tem. This will also require a higher power rated

diode since the voltage drop at the constant current

charge amplitude will be greater. Refer to the pre-

viously stated equations to calculate the minimum

V_INand diode P_Dfor a given application.

V_IN(MIN)= V_BAT(MAX)+ V_F(TRAN)+ V_F(DIODE)

Where:

V_IN(MIN)= Minimum input supply level

V_BAT(MAX)= Maximum battery charge voltage

required

V_F(TRAN)= Pass transistor forward voltage drop

V_F(DIODE)= Blocking diode forward voltage

PCB Layout

Based on the maximum constant current charge

level set for the system, the next step is to deter-

mine the minimum current rating and power han-

dling capacity for the blocking diode. The constant-

current charge level itself will dictate what the mini-

mum current rating must be for a given blocking

diode. The minimum power handling capacity must

be calculated based on the constant current ampli-

tude and the diode forward voltage (V_F):

For the best results, it is recommended to physical-

ly place the battery pack as closely as possible to

the AAT3680's BAT pin. To minimize voltage drops

in the PCB, keep the high current carrying traces

adequately wide. For maximum power dissipation

in the pass transistor, it is critical to provide enough

copper to spread the heat. Refer to the AAT3680

demo board PCB layout in Figures 8, 9, and 10.

V_F

P_D(MIN)

I_CC

3680.2006.03.1.6

1...11 12 131415 16 17 18

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