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AAT3510IGV-3.08-C-C-T1 PDF预览

AAT3510IGV-3.08-C-C-T1

更新时间: 2024-10-28 05:06:19
品牌 Logo 应用领域
ANALOGICTECH 电源电路电源管理电路微处理器光电二极管
页数 文件大小 规格书
11页 111K
描述
Micropower レP Reset with Watchdog Timer

AAT3510IGV-3.08-C-C-T1 数据手册

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AAT3510/1/2/3/4/5/6/7/8/9  
Micropower µP Reset with Watchdog Timer  
Electrical Characteristics  
VCC = 2.5V to 5.5V, TA = -40°C to +85ºC1, unless otherwise noted. Typical values are at TA = 25°C.  
Symbol Description  
Conditions  
Min  
Typ  
Max  
Units  
Open-Drain RESET Output (AAT3517, 3518, 3519)  
VCC 1.0V, ISINK = 50µA  
VCC 1.2V, ISINK = 100µA  
VCC 2.7V, ISINK = 1.2mA  
VCC 4.5V, ISINK = 3.2mA  
0.3  
0.3  
0.3  
0.4  
1.0  
VOL  
RESET Low Output Voltage  
Reset Leakage Current  
V
ID(OFF)  
µA  
ms  
Watchdog Input (AAT3510, 3511, 3512, 3513, 3514, 3517, 3518)  
AAT351xIGV-xx-x-A-T1  
4.3  
71  
6.3  
102  
1.6  
50  
9.3  
153  
2.4  
tWD  
Watchdog Timeout Period  
AAT351xIGV-xx-x-B-T1  
AAT351xIGV-xx-x-C-T12  
1.12  
s
tWDI  
VIL  
WDI Minimum Pulse Width  
WDI Input Threshold3  
WDI Input Threshold3  
VIL = 0.3 x VCC, VIH = 0.7 x VCC  
ns  
0.3 x VCC  
VIH  
0.8 x VCC  
160  
V
WDI = VCC, Time Average  
VWDI = 0, Time Average  
120  
-15  
IWDI  
WDI Input Current4  
µA  
-20  
Manual RESET Input (AAT3510, 3511, 3512, 3515, 3516, 3517, 3519)  
VIL  
MR Input Threshold  
0.3 x VCC  
V
MR Input Threshold  
0.7 x VCC  
MR Input Pulse Width  
MR Glitch Rejection  
1
µs  
ns  
kΩ  
ns  
VIH  
100  
52  
MR Internal Pull-Up Resistance  
MR to Reset Delay  
TA = 25°C  
CC = 5V  
35  
75  
V
230  
1. Over-temperature limits are guaranteed by design, not production tested.  
2. Watchdog timeout period C is not available on AAT3513, AAT3514, and AAT3518.  
3. WDI is internally serviced within the watchdog period if WDI is left unconnected.  
4. The WDI input current is specified as the average input current when the WDI input is driven high or low. The WDI input is designed  
for a three-stated-output device with a 10µA maximum leakage current and capable of driving a maximum capacitive load of 200pF.  
The three-state device must be able to source and sink at least 200µA when active.  
3510.2006.03.1.7  
5

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