Datasheet > AA022P1-00

AA022P1-00

更新时间： 2024-11-30 22:05:15

品牌	Logo	应用领域
阿尔法 - ALPHA		放大器功率放大器
页数	文件大小	规格书
2页	142K
描述
18-23 GHz GaAs MMIC Power Amplifier

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中文翻译

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AA022P1-00 数据手册

18–23 GHz GaAs MMIC

Power Amplifier

AA022P1-00

Features

Chip Outline

1.700

I Single Bias Supply Operation (6 V)

1.613

I 14 dB Typical Small Signal Gain

1.371

I 24.5 dBm Typical P

Output Power

1 dB

at 23 GHz

0.329

I 0.25 µm Ti/Pd/Au Gates

0.086

0.000

I 100% On-Wafer RF and DC Testing

I 100% Visual Inspection to MIL-STD-883

MT 2010

Dimensions indicated in mm.

All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.

Chip thickness = 0.1 mm.

Description

Alpha’s two-stage balanced K band GaAs MMIC power

Absolute Maximum Ratings

amplifier has a typical P

of 24.5 dBm with 13 dB

1 dB

Characteristic

Value

associated gain and 11% power added efficiency at

23 GHz.The chip uses Alpha’s proven 0.25 µm MESFET

technology, and is based upon MBE layers and electron

beam lithography for the highest uniformity and

repeatability. The FETs employ surface passivation to

ensure a rugged reliable part with through-substrate via

holes and gold-based backside metallization to facilitate

a conductive epoxy die attach process. All chips are

screened for small signal S-parameters and power

characteristics prior to shipment for guaranteed

performance. A broad range of applications exist in both

the high reliability and commercial areas where high power

and gain are required.

Operating Temperature (T )

-55°C to +90°C

-65°C to +150°C

Storage Temperature (T

)

Bias Voltage (V )

7 V

Power In (P

)

22 dBm

Junction Temperature (T )

175°C

Electrical Specifications at 25°C (V_DS= 6 V)

Parameter

Drain Current (at Saturation)

Small Signal Gain

Condition

Symbol

Min.

Typ.

Max.

Unit

300

390

F = 18–23 GHz

F = 23 GHz

Input Return Loss

-15

-17

24.5

25.5

-10

Output Return Loss

Output Power at 1 dB Gain Compression

Saturated Output Power

Gain at Saturation

1 dB

dBm

F = 23 GHz

SAT

F = 23 GHz

SAT

Thermal Resistance

°C/W

1. Calculated value based on measurement of discrete FET.

2.Typical represents the median parameter value across the specified

frequency range for the median chip.

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com

Specifications subject to change without notice. 12/99A

中文翻译

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