Datasheet > AA028P1-00

AA028P1-00

更新时间： 2024-11-30 22:05:15

品牌	Logo	应用领域
阿尔法 - ALPHA		放大器射频微波功率放大器
页数	文件大小	规格书
2页	141K
描述
27-29 GHz GaAs MMIC Power Amplifier

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AA028P1-00 数据手册

27–29 GHz GaAs MMIC

Power Amplifier

AA028P1-00

Features

Chip Outline

1.700

1.613

1.371

I Single Bias Supply Operation (6 V)

I 22 dBm Typical P

Output Power

1 dB

at 28 GHz

I 13.5 dB Typical Small Signal Gain

I 0.25 µm Ti/Pd/Au Gates

0.086

0.000

0.329

I 100% On-Wafer RF and DC Testing

I 100% Visual Inspection to MIL-STD-883

MT 2010

Dimensions indicated in mm.

All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.

Chip thickness = 0.1 mm.

Description

Alpha’s two-stage balanced Ka band GaAs MMIC

Absolute Maximum Ratings

power amplifier has a typical P

of 22 dBm with

1 dB

Characteristic

Value

12.5 dB associated gain and 10% power added efficiency

at 28 GHz. The chip uses Alpha’s proven 0.25 µm

MESFET technology, and is based upon MBE layers and

electron beam lithography for the highest uniformity and

repeatability. The FETs employ surface passivation to

ensure a rugged, reliable part with through-substrate via

holes and gold-based backside metallization to facilitate

a conductive epoxy die attach process. All chips are

screened for S-parameters and power characteristics prior

to shipment for guaranteed performance. A broad range

of applications exist in both the commercial and high

reliability areas where high power and gain are required.

Operating Temperature (T )

-55°C to +90°C

-65°C to +150°C

Storage Temperature (T

)

Bias Voltage (V )

7 V

Power In (P

)

22 dBm

Junction Temperature (T )

175°C

Electrical Specifications at 25°C (V_DS= 6 V)

Parameter

Drain Current (at Saturation)

Small Signal Gain

Condition

Symbol

Min.

Typ.

Max.

Unit

300

13.5

-13

-16

400

F = 27–29 GHz

F = 28 GHz

Input Return Loss

-10

Output Return Loss

Output Power at 1 dB Gain Compression

Saturated Output Power

Gain at Saturation

1 dB

dBm

F = 28 GHz

SAT

F = 28 GHz

SAT

Thermal Resistance

°C/W

1. Calculated value based on measurement of discrete FET.

2.Typical represents the median parameter value across the specified

frequency range for the median chip.

Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com

Specifications subject to change without notice. 12/99A

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