Datasheet > A94

A94

更新时间： 2024-11-08 06:35:39

品牌	Logo	应用领域
DAYA		晶体晶体管
页数	文件大小	规格书
2页	201K
描述
TO-92 Plastic-Encapsulate Transistors

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中文翻译

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数据手册

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A94 数据手册

TO-92 Plastic-Encapsulate Transistors

A94

TRANSISTOR (PNP)

FEATURES

TO-92

High voltage

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

1. EMITTER

2. BASE

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Value

Units

-400

3. COLLECTOR

Emitter-Base Voltage

-5

Collector Current -Continuous

-0.2

1 2 3

Collector Power Dissipation

Junction Temperature

Storage Temperature

P_C

0.625

150

T_j

℃

T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_{(BR) CBO}

V_{(BR) CEO}

V_{(BR) EBO}

I_CBO

Test

conditions

MIN

-400

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -100μA, I_E=0

I_C= -1mA,I_B=0

I_E=-100μA,I_C=0

V_CB=-400V, I_E=0

V_CE=-400V, I_B=0

V_EB= -4V, I_C=0

-0.1

-5

μA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

-0.1

300

h_FE(1)

V_CE=-10V, I_C=-10mA

V_CE=-10V, I_C=-1mA

V_CE=-10V, I_C=-100mA

I_C=-10mA, I_B=-1mA

I_C=-50mA, I_B=-5mA

I_C=-10mA, I_B= -1mA

DC current gain

h_FE(2)

h_FE(3)

V_{CE (sat)}

V_{BE (sat)}

f_T

-0.2

-0.3

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

-0.75

V_CE=-20V, I_C=-10mA

f =30MHz

MHz

中文翻译

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