A66-1/SMA66-1
10 TO 1000 MHz
· HIGH GAIN-TWO STAGES: 27.5 dB (TYP.)
· LOW NOISE: <3.0 dB (TYP.)
· HIGH POWER OUTPUT: 15.0 dBm (TYP.)
· WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS
Typical Performance @ 25°C
Specifications (Rev. Date: 1/01)*
Characteristics
Typical
Guaranteed
0° to 50°C
0.0-1.0 GHz
26.0 dB
-54° to +85°C
Frequency
0.0-1.2 GHz
27.5 dB
±0.4 dB
33 dB
2.9 dB
15.0 dBm
+28 dBm
+38 dBm
+43 dBm
1.5:1 / 1.5:1
66 mA
0.0-1.0 GHz
25.5 dB
±1.0 dB
Small Signal Gain (min.)
Gain Flatness (max.)
Reverse Isolation
Noise Figure (max.)
Power Output @ 1 dB comp. (min.)
IP3
±0.7 dB
4.0 dB
14.0 dBm
3.5 dB
14.5 dBm
IP2
Second Order Harmonic IP
VSWR Input / Output (max.)
DC Current @ 15 Volts (max.)
2.0:1 / 2.0:1
72 mA
1.8:1 / 1.8:1
69 mA
* Measured in a 50-ohm system at +15 Vdc Nominal. Subject to change without notice.
Absolute Maximum Ratings
Storage Temperature
-62° to +125°C
125°C
Max. Case Temperature
Max. DC Voltage
+17 Volts
+6 dBm
50 mW
0.5 W
Max. Continuous RF Input Power
Max. Short Term RF Input Power (1 minute max.)
Max. Peak Power (3 µsec max.)
“S” Series Burn-in Temperature (Case)
125°C
Thermal Data: Vcc = 15 Vdc
Thermal Resistance θjc
Transistor Power Dissipation Pd
Junction Temperature Rise Above Case Tjc
145°C/W
0.419 W
61°C
Outline Drawings
Package
Figure
Model
TO-8
A66-1
Surface Mount
SMA Connectorized
CE
CA66-1
Specifications subject to change without notice. • North America: 1-800-366-2266
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