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A49LF004TL-33 PDF预览

A49LF004TL-33

更新时间: 2024-01-12 16:36:37
品牌 Logo 应用领域
联笙电子 - AMICC 内存集成电路
页数 文件大小 规格书
32页 585K
描述
Flash, 512KX8, 120ns, PQCC32, PLASTIC, LCC-32

A49LF004TL-33 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:PLASTIC, LEAD FREE, LCC-32Reach Compliance Code:unknown
风险等级:5.62最长访问时间:120 ns
启动块:TOP命令用户界面:YES
数据轮询:YESJESD-30 代码:R-PQCC-J32
长度:13.97 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:8
端子数量:32字数:524288 words
字数代码:512000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:
组织:512KX8封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
并行/串行:PARALLEL电源:3.3 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:3.4 mm部门规模:64K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.024 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
切换位:YES类型:NOR TYPE
宽度:11.43 mmBase Number Matches:1

A49LF004TL-33 数据手册

 浏览型号A49LF004TL-33的Datasheet PDF文件第9页浏览型号A49LF004TL-33的Datasheet PDF文件第10页浏览型号A49LF004TL-33的Datasheet PDF文件第11页浏览型号A49LF004TL-33的Datasheet PDF文件第13页浏览型号A49LF004TL-33的Datasheet PDF文件第14页浏览型号A49LF004TL-33的Datasheet PDF文件第15页 
A49LF004  
Table 7: A/A Mux Mode Operation Selection  
Mode  
RST#  
OE#  
WE#  
Address  
I/O  
Read  
Write  
VIH  
VIH  
VIH  
VIH  
VIL  
VIL  
VIH  
VIH  
VIH  
X
VIH  
VIL  
VIH  
X
AIN  
DOUT  
AIN  
DIN  
Standby  
Output Disable  
Reset  
X
High Z  
High Z  
High Z  
X
X
X
A21 – A2 = X, A1 = VIL, A0 = VIL  
A21 – A2 = X, A1 = VIL, A0 = VIH  
Manufacturer ID  
Device ID  
Product Identification  
VIH  
VIL  
VIH  
A21 – A2 = X, A1 = VIH, A0 = VIH  
Continuation ID  
Block-Erase Operation  
Data# Polling (I/O7)  
The Block-Erase Operation allows the system to erase the  
device in 64 KByte uniform block size for the A49LF004. The  
Block-Erase operation is initiated by executing a six-byte  
command load sequence for Software Data Protection with  
Block-Erase command (30H or 50H) and block address. The  
internal Block-Erase operation begins after the sixth WE# pulse.  
The End-of-Erase can be determined using either Data# Polling  
or Toggle Bit methods. See Figure 15 for timing waveforms. Any  
commands written during the Block- Erase operation will be  
ignored.  
When the A49LF004 device is in the internal Program operation,  
any attempt to read I/O7 will produce the complement of the true  
data. Once the Program operation is completed, I/O7 will  
produce true data. Note that even though I/O7 may have valid  
data immediately following the completion of an internal Write  
operation, the remaining data outputs may still be invalid: valid  
data on the entire data bus will appear in subsequent  
successive Read cycles after an interval of 1 µs. During internal  
Erase operation, any attempt to read I/O7 will produce a ‘0’.  
Once the internal Erase operation is completed, I/O7 will  
produce a ‘1’. The Data# Polling is valid after the rising edge of  
fourth WE# pulse for Program operation. For Block- or Chip-  
Erase, the Data# Polling is valid after the rising edge of sixth  
WE# pulse. See Figure 12 for Data# Polling timing diagram.  
Proper status will not be given using Data# Polling if the address  
is in the invalid range.  
Chip-Erase  
The A49LF004 device provides a Chip-Erase operation only in  
A/A Mux mode, which allows the user to erase the entire  
memory array to the ‘1’s state. This is useful when the entire  
device must be quickly erased. The Chip-Erase operation is  
initiated by executing a six-byte Software Data Protection  
command sequence with Chip-Erase command (10H) with  
address 5555H in the last byte sequence. The internal Erase  
operation begins with the rising edge of the sixth WE#. During  
the internal Erase operation, the only valid read is Toggle Bit or  
Data# Polling. See Table 8 for the command sequence, Figure  
16 for timing diagram, and Figure 21 for the flowchart. Any  
commands written during the Chip-Erase operation will be  
ignored.  
Toggle Bit (I/O6)  
During the internal Program or Erase operation, any consecutive  
attempts to read I/O6 will produce alternating ‘0’s and ‘1’s, i.e.,  
toggling between 0 and 1. When the internal Program or Erase  
operation is completed, the toggling will stop. The device is then  
ready for the next operation. The Toggle Bit is valid after the  
rising edge of fourth WE# pulse for Program operation. For  
Block- or Chip-Erase, the Toggle Bit is valid after the rising edge  
of sixth WE# pulse. See Figure 13 for Toggle Bit timing diagram.  
Write Operation Status Detection  
The A49LF004 device provides two software means to detect  
the completion of a Write (Program or Erase) cycle, in  
Data Protection  
The A49LF004 device provides both hardware and software  
features to protect nonvolatile data from inadvertent writes.  
order to optimize the system Write cycle time. The software  
detection includes two status bits: Data# Polling (I/O7) and  
Toggle Bit (I/O6). The End-of-Write detection mode is enabled  
after the rising edge of WE# which initiates the internal Program  
or Erase operation. The actual completion of the nonvolatile  
write is asynchronous with the system; therefore, either a Data#  
Polling or Toggle Bit read may be simultaneous with the  
completion of the Write cycle. If this occurs, the system may  
possibly get an erroneous result, i.e., valid data may appear to  
conflict with either I/O7 or I/O6. In order to prevent spurious  
rejection, if an erroneous result occurs, the software routine  
should include a loop to read the accessed location an  
additional two times. If both reads are valid, then the device has  
completed the Write cycle, otherwise the rejection is valid.  
Hardware Data Protection  
Noise/Glitch Protection: A WE# pulse of less than 5 ns will not  
initiate a Write cycle.  
VDD Power Up/Down Detection: The Write operation is inhibited  
when VDD is less than 1.5V.  
Write Inhibit Mode: Forcing OE# low, WE# high will inhibit the  
Write operation. This prevents inadvertent writes during power-  
up or power-down.  
(December, 2005, Version 1.0)  
11  
AMIC Technology, Corp.  

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