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A43E16161G-95F PDF预览

A43E16161G-95F

更新时间: 2022-12-01 23:20:49
品牌 Logo 应用领域
联笙电子 - AMICC 动态存储器
页数 文件大小 规格书
48页 557K
描述
Synchronous DRAM, 2MX16, 7ns, CMOS, PBGA54

A43E16161G-95F 数据手册

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A43E16161  
Operating AC Parameter  
(AC operating conditions unless otherwise noted)  
Version  
Symbol  
Parameter  
Unit  
Note  
-75  
15  
20  
-95  
19  
24  
tRRD(min)  
tRCD(min)  
Row active to row active delay  
ns  
ns  
1
1
RAS to  
delay  
CAS  
tRP(min)  
tRAS(min)  
tRAS(max)  
tRC(min)  
Row precharge time  
Row active time  
20  
50  
24  
50  
ns  
ns  
μs  
ns  
1
1
100  
72.5  
100  
74  
Row cycle time  
1
tCDL(min)  
tRDL(min)  
tBDL(min)  
tCCD(min)  
Last data in new col. Address delay  
Last data in row precharge  
7.5  
15  
9.5  
15  
ns  
ns  
ns  
ns  
2
2
2
Last data in to burst stop  
7.5  
7.5  
9.5  
9.5  
Col. Address to col. Address delay  
Note: 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and  
then rounding off to the next higher integer.  
2. Minimum delay is required to complete write.  
PRELIMINARY (February, 2008, Version 0.3)  
7
AMIC Technology, Corp.  

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