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A43E06321G-75UF PDF预览

A43E06321G-75UF

更新时间： 2024-01-25 00:12:01
品牌 Logo 应用领域
联笙电子 - AMICC 动态存储器
页数 文件大小 规格书
46页 1352K
描述
512K X 32 Bit X 2 Banks Low Power Synchronous DRAM

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A43E06321G-75UF 技术参数

生命周期：Contact Manufacturer包装说明：,
Reach Compliance Code：unknown风险等级：5.75
Base Number Matches：1

A43E06321G-75UF 数据手册

 浏览型号A43E06321G-75UF的Datasheet PDF文件第6页浏览型号A43E06321G-75UF的Datasheet PDF文件第7页浏览型号A43E06321G-75UF的Datasheet PDF文件第8页浏览型号A43E06321G-75UF的Datasheet PDF文件第10页浏览型号A43E06321G-75UF的Datasheet PDF文件第11页浏览型号A43E06321G-75UF的Datasheet PDF文件第12页 
A43E06321  
Simplified Truth Table  
Command  
CKEn-1 CKEn  
DQM BA A10 A9~A0 Notes  
/AP  
CAS  
CS  
WE  
RAS  
Register  
Mode Register Set  
1,2  
H
H
X
X
L
L
L
L
L
L
L
L
X
L
OP CODE  
OP CODE  
Extended Mode Register Set  
1,2  
3
Refresh  
Auto Refresh  
Self  
H
L
H
L
L
L
L
H
H
X
X
X
Entry  
Exit  
3
H
H
3
Refresh  
L
H
X
X
X
H
L
X
L
X
H
X
H
3
4
Bank Active & Row Addr.  
H
V
V
Row Addr.  
Read &  
Column Addr.  
Auto Precharge Disable  
Auto Precharge Enable  
Auto Precharge Disable  
Auto Precharge Enable  
L
H
L
Column  
Addr.  
4
4,5  
4
H
X
L
H
L
H
X
Write &  
Column  
Addr.  
H
H
X
X
L
L
H
H
L
L
L
X
X
V
Column Addr.  
H
4,5  
6
Burst Stop  
Precharge  
H
X
Bank Selection  
Both Banks  
V
X
L
H
X
L
L
H
L
X
X
H
L
H
X
L
H
X
X
H
X
V
X
X
H
X
H
X
H
X
X
H
X
V
X
H
X
X
H
X
V
X
Entry  
H
L
L
H
L
X
X
X
Clock Suspend or  
Active Power Down  
X
X
Exit  
Entry  
H
H
L
Precharge Power Down Mode  
Exit  
L
H
H
H
X
X
V
X
H
DQM  
X
X
7
8
L
H
L
H
X
H
X
H
X
L
No Operation Command  
Deep Power Down Entry  
Deep Power Down Exit  
H
L
L
X
X
X
X
H
X
X
(V = Valid, X = Don’t Care, H = Logic High, L = Logic Low)  
Note : 1. OP Code: Operand Code  
A0~A10, BA: Program keys. (@MRS, EMRS)  
2. MRS can be issued only when all banks are at precharge state.  
A new command can be issued after 2 clock cycle of MRS, EMRS.  
3. Auto refresh functions is same as CBR refresh of DRAM.  
The automatical precharge without Row precharge command is meant by “Auto”.  
Auto/Self refresh can be issued only when all banks are at precharge state.  
4. BA: Bank select address.  
5. During burst read or write with auto precharge, new read/write command cannot be issued.  
Another bank read/write command can be issued at every burst length.  
6. Bust stop command is valid at every burst length.  
7. DQM sampled at positive going edge of a CLK masks the data-in at the very CLK (Write DQM latency is 0)  
but masks the data-out Hi-Z state after 2 CLK cycles. (Read DQM latency is 2)  
8. After Deep Power Down mode exit, a full new initialization of the memory device is mandatory.  
PRELIMINARY (July, 2005, Version 0.0)  
8
AMIC Technology, Corp.  
1...6789101112...46

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