Datasheet > A3T21H456W23S

A3T21H456W23S

更新时间： 2022-02-26 13:10:07

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
8页	671K
描述
N-Channel Enhancement-Mode Lateral MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

A3T21H456W23S 数据手册

Table 4. Electrical Characteristics (T = 25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

(1,2,3)

Functional Tests

(In NXP Doherty Test Fixture, 50 ohm system) V = 30 Vdc, I

= 800 mA, V

= 0.35 Vdc, P = 87 W Avg.,

DQA

GSB

out

f = 2110 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured

in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.

Power Gain

13.8

46.0

55.9

—

14.8

49.5

56.8

16.8

—

Drain Efficiency



@ 3 dB Compression Point, CW

P3dB

ACPR

—

dBm

dBc

out

Adjacent Channel Power Ratio

–30.3

–27.5

(3)

Load Mismatch

(In NXP Doherty Test Fixture, 50 ohm system) I

= 800 mA, V

= 0.35 Vdc, f = 2140 MHz, 12 sec(on),

GSB

DQA

10% Duty Cycle

VSWR 10:1 at 32 Vdc, 550 W Pulsed CW Output Power

(3 dB Input Overdrive from 389 W Pulsed CW Rated Power)

No Device Degradation

(3)

Typical Performance

(In NXP Doherty Test Fixture, 50 ohm system) V = 30 Vdc, I

= 800 mA, V

= 0.35 Vdc, 2110–2200 MHz

GSB

DQA

Bandwidth

(4)

@ 3 dB Compression Point

P3dB

—

562

—

out

AM/PM

(Maximum value measured at the P3dB compression point across



–20



the 2110–2200 MHz bandwidth)

VBW Resonance Point

VBW

—

210

—

MHz

res

(IMD Third Order Intermodulation Inflection Point)

Gain Flatness in 90 MHz Bandwidth @ P = 87 W Avg.

—

0.2

—

out

Gain Variation over Temperature

G

0.005

dB/C

(–30C to +85C)

Output Power Variation over Temperature

P1dB

—

0.004

—

dB/C

(–30C to +85C)

Table 5. Ordering Information

Device

Tape and Reel Information

R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel

Package

A3T21H456W23SR6

ACP--1230S--4L2S

1. V

and V

must be tied together and powered by a single DC power supply.

DDB

DDA

2. Part internally matched both on input and output.

3. Measurements made with device in an asymmetrical Doherty configuration.

4. P3dB = P

+ 7.0 dB where P

is the average output power measured using an unclipped W--CDMA single--carrier input signal where

avg

output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

A3T21H456W23SR6

RF Device Data

NXP Semiconductors

1 234 5 6 7 8

下载PDF

与A3T21H456W23S相关器件

型号	品牌	描述	获取价格	数据表
A3T21H456W23SR6	NXP	N-Channel Enhancement-Mode Lateral MOSFET	获取价格
A3T23H300W23S	NXP	N-Channel Enhancement-Mode Lateral MOSFET	获取价格
A3T23H300W23SR6	NXP	N-Channel Enhancement-Mode Lateral MOSFET	获取价格
A3T23H450W23S	NXP	Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 87 W Avg., 30 V	获取价格
A3T23H450W23SR6	NXP	RF Power Field-Effect Transistor	获取价格
A3T-3MX	FOTEK	FREE POWER PHOTO SENSOR	获取价格