Datasheet > A3T21H456W23S

A3T21H456W23S

更新时间： 2022-02-26 13:10:07

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
8页	671K
描述
N-Channel Enhancement-Mode Lateral MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

A3T21H456W23S 数据手册

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Vdc

C

Drain--Source Voltage

–0.5, +65

–6.0, +10

32, +0

DSS

Gate--Source Voltage

Operating Voltage

Storage Temperature Range

Case Operating Temperature Range

stg

–65 to +150

–40 to +150

–40 to +225

C

(1,2)

Operating Junction Temperature Range

C

CW Operation @ T = 25C when DC current is fed through pin 3 and pin 6

Derate above 25C

131

0.8

W/C

Table 2. Thermal Characteristics

Characteristic

(2,3)

Symbol

Value

Unit

Thermal Resistance, Junction to Case



0.14

C/W

Case Temperature 79C, 87 W Avg., W--CDMA, 30 Vdc, I

= 800 mA,

DQA

= 0.35 Vdc, 2155 MHz

GSB

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JS--001--2017)

Charge Device Model (per JS--002--2014)

Table 4. Electrical Characteristics (T = 25C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

(4)

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

Adc

DSS

GSS

(V = 65 Vdc, V = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(V = 32 Vdc, V = 0 Vdc)

Gate--Source Leakage Current

(V = 5 Vdc, V = 0 Vdc)

On Characteristics -- Side A, Carrier

Gate Threshold Voltage

1.4

2.2

0.0

1.8

2.6

2.2

3.0

0.3

Vdc

GS(th)

(V = 10 Vdc, I = 160 Adc)

Gate Quiescent Voltage

(V = 30 Vdc, I = 800 mAdc, Measured in Functional Test)

GSA(Q)

Drain--Source On--Voltage

(V = 10 Vdc, I = 1.6 Adc)

0.15

DS(on)

On Characteristics -- Side B, Peaking

Gate Threshold Voltage

0.8

0.0

1.2

1.6

0.3

Vdc

GS(th)

(V = 10 Vdc, I = 360 Adc)

Drain--Source On--Voltage

(V = 10 Vdc, I = 3.6 Adc)

0.15

DS(on)

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.nxp.com/RF/calculators.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

4. Side A and Side B are tied together for these measurements.

(continued)

A3T21H456W23SR6

RF Device Data

NXP Semiconductors

123 4 5 6 7 8

下载PDF

与A3T21H456W23S相关器件

型号	品牌	描述	获取价格	数据表
A3T21H456W23SR6	NXP	N-Channel Enhancement-Mode Lateral MOSFET	获取价格
A3T23H300W23S	NXP	N-Channel Enhancement-Mode Lateral MOSFET	获取价格
A3T23H300W23SR6	NXP	N-Channel Enhancement-Mode Lateral MOSFET	获取价格
A3T23H450W23S	NXP	Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 87 W Avg., 30 V	获取价格
A3T23H450W23SR6	NXP	RF Power Field-Effect Transistor	获取价格
A3T-3MX	FOTEK	FREE POWER PHOTO SENSOR	获取价格