Datasheet > A3T21H456W23S

A3T21H456W23S

更新时间： 2024-02-06 19:36:31

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
8页	671K
描述
N-Channel Enhancement-Mode Lateral MOSFET

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

A3T21H456W23S 数据手册

PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS

Refer to the following resources to aid your design process.

Application Notes



AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages

AN1955: Thermal Measurement Methodology of RF Power Amplifiers

Engineering Bulletins

EB212: Using Data Sheet Impedances for RF LDMOS Devices

Software



Electromigration MTTF Calculator

.s2p File

Development Tools

Printed Circuit Boards



To Download Resources Specific to a Given Part Number:

1. Go to http://www.nxp.com/RF

2. Search by part number

3. Click part number link

4. Choose the desired resource from the drop down menu

REVISION HISTORY

The following table summarizes revisions to this document.

Revision

Date

Description

May 2018

Aug. 2018



Initial release of data sheet

Functional Tests table: changed P3dB min value from 55.5 dBm to 55.9 dBm to reflect current production

data, p. 3

A3T21H456W23SR6

RF Device Data

NXP Semiconductors

1...4 5 678

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
A3T21H456W23SR6	NXP	获取价格	N-Channel Enhancement-Mode Lateral MOSFET
A3T23H300W23S	NXP	获取价格	N-Channel Enhancement-Mode Lateral MOSFET
A3T23H300W23SR6	NXP	获取价格	N-Channel Enhancement-Mode Lateral MOSFET
A3T23H450W23S	NXP	获取价格	Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 87 W Avg., 30 V
A3T23H450W23SR6	NXP	获取价格	RF Power Field-Effect Transistor
A3T-3MX	FOTEK	获取价格	FREE POWER PHOTO SENSOR
A3T-3MXP	FOTEK	获取价格	FREE POWER PHOTO SENSOR
A3UL-TBG-1A2C-M	OMRON	获取价格	Pushbutton Switch, DPDT, 0.1A, 30VDC
A3UL-TMW-1A1C-5M	OMRON	获取价格	Special Switch, SPDT, 0.1A, 30VDC
A3UL-TMW-1A1C-M	OMRON	获取价格	Special Switch, SPDT, 0.1A, 30VDC