Datasheet > A3V09H521-24SR6

A3V09H521-24SR6

更新时间： 2024-09-23 18:19:07

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
8页	249K
描述
RF Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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A3V09H521-24SR6 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.68
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

A3V09H521-24SR6 数据手册

Document Number: A3V09H521--24S

Rev. 0, 02/2019

NXP Semiconductors

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

A3V09H521--24SR6

This 107 W asymmetrical Doherty RF power LDMOS transistor is designed

for cellular base station applications covering the frequency range of 720 to

960 MHz.

900 MHz

720–960 MHz, 107 W AVG., 48 V

AIRFAST RF POWER LDMOS

TRANSISTOR



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 48 Vdc,

I_DQA= 800 mA, V_GSB= 0.7 Vdc, P_out= 107 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

Frequency

920 MHz

940 MHz

960 MHz

(dB)

18.6

18.5

(%)

53.6

53.2

53.5

7.6

7.8

7.9

–31.1

–33.3

–34.7

Features



Advanced high performance in--package Doherty

NI--1230S--4L2L

Greater negative gate--source voltage range for improved Class C

operation



Designed for digital predistortion error correction systems

(1)

VBW

Carrier

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

Peaking

(1)

VBW

(Top View)

Figure 1. Pin Connections

1. Device cannot operate with V

current

supplied through pin 3 and pin 6.

 2019 NXP B.V.

A3V09H521--24SR6

RF Device Data

NXP Semiconductors

12 3 4 5 6 7 8

中文翻译

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