Datasheet > A25L080O-UFQ

A25L080O-UFQ

更新时间： 2024-11-07 12:35:47

品牌	Logo	应用领域
联笙电子 - AMICC		闪存
页数	文件大小	规格书
43页	681K
描述
16Mbit Low Voltage, Serial Flash Memory With 100MHz Uniform 4KB Sectors

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数据手册

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A25L080O-UFQ 数据手册

A25L016 Series

16Mbit Low Voltage, Serial Flash Memory

With 100MHz Uniform 4KB Sectors

Document Title

16Mbit, Low Voltage, Serial Flash Memory With 100MHz Uniform 4KB Sectors

Revision History

Rev. No. History

Issue Date

Remark

1.0

1.1

Initial issue

April 2, 2008

Final

Add the spec. of I^CC3for 100MHz

December 26, 2008

Modify the I^CC1and ICC2 to 25μA

Modify the I^CC7to 25mA

Modify the t^PPto 3ms

Modify the t^SEto 0.2s

1.2

Modify the Sector Erase Time to 0.2s (typical)

Modify the Page Program Time to 2ms (typical)

Modify the Active Read Current to 35mA (Max.)

Modify the Program/Erase Current to 25mA (Max.)

April 9, 2009

Modify the Standby Current to 25μA (Max.)

Modify Block Erase Cycle Time to 1.3s (Max.)

Modify Chip Erase Cycle Time to 40s (Max.)

Add packing description in Part Numbering Scheme

1.3

1.4

April 23, 2010

October 27, 2010

P30: Change Data Retention and Endurance value from Max.

to Min.

1.5

1.6

1.7

Add 8-pin WSON (6*5mm) package type

Change t^W, tSE, tBE and tCE values

December 21, 2010

August 19, 2011

P1: Add “Provide 64Bytes Security ID (application note is available

by request)” in Features

September 20, 2011

1.8

1.9

Add 8-pin SOP (150mil) package type

Change t^SE(typ.) from 0.15s to 0.08s

Change t^SE(max.) from 0.28s to 0.2s

Change t^BE(typ,) from 0.7s to 0.5s

October 11, 2011

November 15, 2011

2.0

P31: Change I^CC6(max.) from 15mA to 25mA

March 29, 2012

(March, 2012, Version 2.0)

AMIC Technology Corp.

12 3 4 5 6 7...43

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