Datasheet > A1751A39NNSC10

A1751A39NNSC10

更新时间： 2024-10-29 04:13:55

品牌	Logo	应用领域
富士通 - FUJITSU		光电
页数	文件大小	规格书
10页	88K
描述
Optoelectronic Device

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技术参数
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A1751A39NNSC10 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
HTS代码：	8541.40.80.00	风险等级：	5.84
光电设备类型：	OPTOELECTRONIC DEVICE

A1751A39NNSC10 数据手册

Data Sheet, Rev. 4

June 2001

A1751A DWDM Analog

Forward-Path or Return-Path Laser Modules

Characteristics (continued)

Table 2. Additional Characteristics

Parameter

Bias Current¹

Symbol

Conditions

Min

Max

Unit

ITH

BOL

—

120

Threshold Current

Slope Efficiency²

25 °C, BOL

IP = ITH + 20 and

ITH + 60

0.10

—

mW/mA

Monitor Photocurrent

IMON

IOP = 0 mA, VRM = 5 V,

TOP = 25 °C

200

µA/mW

Operating Chip Temperature³

TEC Current

TOP

ITEC

IF = IOP

°C

–40 °C < TC < 85 °C,

TOP = 15 °C—35 °C,

IF = 60 mA

–1.5

1.5

TEC Voltage

VTEC

RTH

TOP = 15 °C—35 °C over TC

–2.5

—

3.8

10.5

—

Thermistor Resistance

Optical Return Loss

TOP = 25 °C

kΩ

Side Mode Suppression Ratio

SMSR

IF = IOP

—

1. Bias point at which all specifications apply.

2. For 10 mW output power. Minimum slope efficiency is lower for lower-power lasers.

3. Chip temperature at which wavelength specification is met. Operating chip temperature is reported for each laser.

Electrical Schematics

ISOLATOR

13 (+)

(–)

(+)

(–)

11 (+)

CASE

GROUND

CASE

GROUND

TEC

1-1233(F)

Figure 1. A1751A Laser Schematic

Agere Systems Inc.

1 234 5 6 7...10

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