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A1751A39FFPG08

更新时间: 2024-10-29 04:11:23
品牌 Logo 应用领域
富士通 - FUJITSU 光电
页数 文件大小 规格书
10页 88K
描述
Optoelectronic Device

A1751A39FFPG08 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
HTS代码:8541.40.80.00风险等级:5.84
光电设备类型:OPTOELECTRONIC DEVICEBase Number Matches:1

A1751A39FFPG08 数据手册

 浏览型号A1751A39FFPG08的Datasheet PDF文件第1页浏览型号A1751A39FFPG08的Datasheet PDF文件第2页浏览型号A1751A39FFPG08的Datasheet PDF文件第4页浏览型号A1751A39FFPG08的Datasheet PDF文件第5页浏览型号A1751A39FFPG08的Datasheet PDF文件第6页浏览型号A1751A39FFPG08的Datasheet PDF文件第7页 
Data Sheet, Rev. 4  
June 2001  
A1751A DWDM Analog  
Forward-Path or Return-Path Laser Modules  
Characteristics (continued)  
Table 2. Additional Characteristics  
Parameter  
Bias Current1  
Symbol  
Conditions  
Min  
Max  
Unit  
IB  
ITH  
η
BOL  
120  
30  
mA  
mA  
Threshold Current  
Slope Efficiency2  
25 °C, BOL  
IP = ITH + 20 and  
ITH + 60  
0.10  
mW/mA  
Monitor Photocurrent  
IMON  
IOP = 0 mA, VRM = 5 V,  
TOP = 25 °C  
10  
200  
µA/mW  
Operating Chip Temperature3  
TEC Current  
TOP  
ITEC  
IF = IOP  
18  
35  
°C  
A
–40 °C < TC < 85 °C,  
TOP = 15 °C—35 °C,  
IF = 60 mA  
–1.5  
1.5  
TEC Voltage  
VTEC  
RTH  
TOP = 15 °C—35 °C over TC  
–2.5  
3.8  
10.5  
V
Thermistor Resistance  
Optical Return Loss  
TOP = 25 °C  
TC  
kΩ  
dB  
dB  
RL  
40  
Side Mode Suppression Ratio  
SMSR  
IF = IOP  
30  
1. Bias point at which all specifications apply.  
2. For 10 mW output power. Minimum slope efficiency is lower for lower-power lasers.  
3. Chip temperature at which wavelength specification is met. Operating chip temperature is reported for each laser.  
Electrical Schematics  
1
2
3
4
5
6
7
14  
NC  
ISOLATOR  
13 (+)  
(–)  
12  
(–)  
(+)  
(+)  
(–)  
11 (+)  
10  
9
NC  
CASE  
GROUND  
8
CASE  
GROUND  
TEC  
1-1233(F)  
Figure 1. A1751A Laser Schematic  
3
Agere Systems Inc.  

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