Datasheet > A1015

A1015

更新时间： 2024-02-10 19:31:22

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管放大器
页数	文件大小	规格书
2页	262K
描述
TRANSISTOR (PNP)

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技术参数
数据手册

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A1015 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

A1015 数据手册

A0115

TRANSISTOR (PNP)

SOT-23

FEATURES

High voltage and high current

Excellent h_FELinearity

Low niose

1. BASE

2. EMITTER

3. COLLECTOR

Complementary to C1815

MARKING: BA

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Value

Units

Collector-Base Voltage

-50

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

150

℃

P_C

200

T_J

125

T_stg

Storage Temperature

-55-125

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V(BR)_EBO

I_CBO

Test conditions

I_C= -100u A, I_E=0

I_C= -0.1mA, I_B=0

MIN

-50

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E= -100 u A, I_C=0

V_CB=-50V , I_E=0

V_CE= -50V , I_B=0

V_EB=- 5V, I_C=0

-0.1

400

-0.3

-1.1

u A

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

DC current gain

h_FE

V_CE=-6V, I_C= -2mA

I_C=-100 mA, I_B= -10mA

130

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

V_CE=-10V, I_C= -1mA

Transition frequency

f_T

MHz

f=30MHz

CLASSIFICATION OF h_FE

Rank

130-200

Range

200-400

JinYu

semiconductor

www.htsemi.com

Date:2011/05

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