2SA1254

更新时间： 2024-01-09 03:26:51

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
2页	41K
描述
Silicon PNP epitaxial planer type

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2SA1254 数据手册

Transistor

2SA1254

Silicon PNP epitaxial planer type

For high-frequency amplification

Complementary to 2SC2206

Unit: mm

6.9±0.1

2.5±0.1

1.5

1.5 R0.9

1.0

Features

High transition frequency f_T.

■

R0.9

●

Low collector to emitter saturation voltage V_CE(sat)

●

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

R0.7

0.85

Absolute Maximum Ratings (Ta=25˚C)

■

0.55±0.1

0.45±0.05

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

–30

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

–20

–5

2.5

–60

˚C

I_C

–30

1:Base

2:Collector

3:Emitter

EIAJ:SC–71

M Type Mold Package

Collector power dissipation

Junction temperature

Storage temperature

P_C

400

T_j

150

T_stg

–55 ~ +150

˚C

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

I_CEO

I_EBO

Conditions

min

typ

max

– 0.1

–100

–10

Unit

µA

V_CB= –10V, I_E= 0

Collector cutoff current

V_CE= –20V, I_B= 0

V_EB= –5V, I_C= 0

µA

Emitter cutoff current

µA

Forward current transfer ratio

Transition frequency

h_FE

_CE= –10V, I_C= –1mA

220

f_T

V_CB= –10V, I_E= 1mA, f = 200MHz

I_C= –10mA, I_B= –1mA

150

300

– 0.1

– 0.7

2.8

MHz

Collector to emitter saturation voltage V_CE(sat)

Base to emitter voltage

Noise figure

V_BE

Z_rb

V_CE= –10V, I_C= –1mA

V_CB= –10V, I_E= 1mA, f = 5MHz

V_CB= –10V, I_E= 1mA, f = 2MHz

V_CE= –10V, I_C= –1mA, f = 10.7MHz

4.0

Ω

Reverse transfer impedance

Common emitter reverse transfer capacitance C_re

1.2

2.0

^*h_FERank classification

Rank

h_FE

70 ~ 140

110 ~ 220

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