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2N3055A PDF预览

2N3055A

更新时间: 2024-02-05 13:45:50
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 37K
描述
isc Silicon NPN Power Transistor

2N3055A 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.59外壳连接:COLLECTOR
最大集电极电流 (IC):15 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):5
JEDEC-95代码:TO-3JESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):2.5 MHzBase Number Matches:1

2N3055A 数据手册

 浏览型号2N3055A的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2N3055A  
DESCRIPTION  
·Excellent Safe Operating Area  
·DC Current Gain-hFE=20-70@IC = 4A  
·Collector-Emitter Saturation Voltage-  
: VCE(sat)= 1.1 V(Max)@ IC = 4A  
·Complement to Type MJ2955A  
APPLICATIONS  
·Designed for high power audio, stepping motor and other  
linear applications. It can also be used in power switching  
circuits such as relay or solenoid drivers,DC-DC converters,  
inverters, or for inductive loads.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEV  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
100  
100  
60  
UNIT  
V
V
V
7
V
Collector Current-Continuous  
Base Current  
15  
A
IB  
7
A
PC  
Collector Power Dissipation@TC=25  
Junction Temperature  
115  
200  
-65~200  
W
TJ  
Storage Temperature  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
1.52  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  
1

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