Datasheet > 2N3055HV

2N3055HV

更新时间： 2024-11-15 03:56:07

品牌	Logo	应用领域
TRSYS		晶体晶体管
页数	文件大小	规格书
3页	201K
描述
NPN POWER TRANSISTOR

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中文翻译

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数据手册

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2N3055HV 数据手册

Transys

Electronics

I M I T E D

2N3055HV

NPN POWER TRANSISTOR

TO-3

Metal Can Package

Switching Regulator and Power Amplifier Applications

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNITS

V_CBO

V_CEO

V_EBO

I_C

Collector Base Voltage ( Open Emitter)

Collector Emitter Voltage (Open Base)

Emitter Base Voltage

100

7.0

Collector Current

I_B

Base Current

7.0

Total Power Dissipation up toT_c=25ºC

P_tot

T_j

ºC

100

200

Junction Temperature

Storage Temperature

T_stg

- 65 to +200

1.75

THERMAL RESISTANCE

Junction to Case

R_th(j-c)

ºC/W

ELECTRICAL CHARACTERISTICS (T_C=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

MAX

UNITS

Breakdown Voltages

V_CEO(sus)

V_CBO

I_C=200mA, I_B=0

I_C=1mA, I_E= 0

100

V_EBO

I_E=1mA, I_C=0

I_CEX

V_CE=100V, V_BE=(off)=1.5V

Collector Cut off Current

1.0

I_CEX

T_c=150ºC

V_CE=100V, V_BE=(off)=1.5V

V_CE=30V, I_B=0

5.0

0.7

5.0

1.1

3.0

I_CEO

I_EBO

Collector Cut off Current

V_BE=7V, I_C=0

Emitter Cut off Current

V_CE(Sat)

I_C=4A, I_B=400mA

I_C=10A, I_B=3.3A

I_C=4A, V_CE=4V

Collector Emitter Saturation Voltage

V_BE(on)

h_FE*

Base Emitter on Voltage

DC Current Gain

I_C=4A, V_CE=4V

100

h_FE*

I_C=10A, V_CE=4V

12 3

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