2N3055H

更新时间： 2024-11-15 07:28:23

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
2页	36K
描述
isc Silicon NPN Power Transistor

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中文翻译

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2N3055H 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2N3055H

DESCRIPTION

·Excellent Safe Operating Area

·DC Current Gain-h_FE=20-70@I_C= 4A

·Collector-Emitter Saturation Voltage-

: V_CE(sat)= 1.1 V(Max)@ I_C= 4A

APPLICATIONS

·Designed for general-purpose switching and amplifier

Applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CER

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

100

UNIT

100

Collector Current-Continuous

Base Current

I_B

P_C

Collector Power Dissipation@T_C=25℃

Junction Temperature

115

200

-65~200

℃

T_J

Storage Temperature

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

1.52

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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