2N3055H

更新时间： 2024-11-14 21:54:15

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管局域网
页数	文件大小	规格书
4页	85K
描述
Complementary Silicon Power Transistors

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中文翻译

获取价格

数据手册
替代型号

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2N3055H 数据手册

2N3055, MJ2955

Preferred Device

Complementary Silicon

Power Transistors

. . . designed for general−purpose switching and amplifier

applications.

• DC Current Gain − h = 20−70 @ I = 4 Adc

http://onsemi.com

• Collector−Emitter Saturation Voltage −

= 1.1 Vdc (Max) @ I = 4 Adc

CE(sat)

15 A

POWER TRANSISTORS

COMPLEMENTARY SILICON

60 V

• Excellent Safe Operating Area

• Pb−Free Package is Available

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current − Continuous

Base Current

Symbol

Value

Unit

Vdc

Adc

115 W

CEO

CER

MARKING

DIAGRAM

100

xxxx55

TO−204AA (TO−3)

CASE 1−07

YYWW

Total Power Dissipation @ T = 25°C

Derate above 25°C

115

0.657

W/°C

Operating and Storage Junction Tempera-

ture Range

T , T

–65 to +200

°C

xxxx55 = Device Code

stg

xxxx= 2N3055 or MJ2955

= Assembly Location

= Year

THERMAL CHARACTERISTICS

Characteristic

WW = Work Week

Symbol

Max

Unit

= 1, 2, or 3

Thermal Resistance, Junction−to−Case

1.52

°C/W

ORDERING INFORMATION

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

†

Device

2N3055

Package

Shipping

TO−204AA

100 Units / Tray

1 Units / Tubes

2N3055G

TO−204AA

(Pb−Free)

160

140

120

2N3055H

MJ2955

TO−204AA

100 Units / Tray

100

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy

and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

100

125

150

175

200

Preferred devices are recommended choices for future use

and best overall value.

T , CASE TEMPERATURE (°C)

Figure 1. Power Derating

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

April, 2004 − Rev. 4

2N3055/D

12 3 4

中文翻译

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2N3055H 替代型号

型号	品牌	替代类型	描述	数据表
BUT11A	ONSEMI	功能相似	NPN芯片晶体管
BD136-10	CDIL	功能相似	Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti

与2N3055H相关器件

型号	品牌	获取价格	描述	数据表
2N3055HG	STMICROELECTRONICS	获取价格	Transistor Silicon Power NPN, TO-204 (TO-3), 100-FTRAY
2N3055HG	ONSEMI	获取价格	晶体管硅功率 NPN
2N3055HV	TRSYS	获取价格	NPN POWER TRANSISTOR
2N3055LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
2N3055S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 15A I(C) \| TO-3
2N3055SD	ETC	获取价格	Power Transistors
2N3055SPL	CDIL	获取价格	Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
2N3056	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
2N3056A	NJSEMI	获取价格	20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A
2N3056A	CENTRAL	获取价格	Transistor

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