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97SD3248BRPQI PDF预览

97SD3248BRPQI

更新时间: 2024-01-25 13:12:32
品牌 Logo 应用领域
麦斯威 - MAXWELL 动态存储器
页数 文件大小 规格书
40页 583K
描述
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97SD3248BRPQI 数据手册

 浏览型号97SD3248BRPQI的Datasheet PDF文件第32页浏览型号97SD3248BRPQI的Datasheet PDF文件第33页浏览型号97SD3248BRPQI的Datasheet PDF文件第34页浏览型号97SD3248BRPQI的Datasheet PDF文件第36页浏览型号97SD3248BRPQI的Datasheet PDF文件第37页浏览型号97SD3248BRPQI的Datasheet PDF文件第38页 
97SD3248  
1.5Gb (8-Meg X 48-Bit X 4-Banks) SDRAM  
DQM Control  
The DQM mask the bytes of the DQ data. The timing of DQM is different during reading and writing.  
Reading: When data is read, the output buffer can be controlled by DQM. By setting DQM to Low, the output  
buffer becomes Low-Z, enabling data output. By setting DQM to High, the output buffer becomes High-Z and  
the corresponding data is not output. However, internal reading operations continue. The latency of DQM  
during reading is 2 clocks.  
Writing: Input data can be masked by DQM. By setting DQM to Low, data can be written. In addition, when  
DQM is set to High, the corresponding data is not written, and previous data is held. The latency of DQM  
during writing is 0 clock.  
Reading  
02.04.05 Rev 3  
All data sheets are subject to change without notice 35  
©2005 Maxwell Technologies  
All rights reserved.  

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