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97SD3248BRPQI PDF预览

97SD3248BRPQI

更新时间: 2024-01-16 01:13:32
品牌 Logo 应用领域
麦斯威 - MAXWELL 动态存储器
页数 文件大小 规格书
40页 583K
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97SD3248BRPQI 数据手册

 浏览型号97SD3248BRPQI的Datasheet PDF文件第34页浏览型号97SD3248BRPQI的Datasheet PDF文件第35页浏览型号97SD3248BRPQI的Datasheet PDF文件第36页浏览型号97SD3248BRPQI的Datasheet PDF文件第38页浏览型号97SD3248BRPQI的Datasheet PDF文件第39页浏览型号97SD3248BRPQI的Datasheet PDF文件第40页 
97SD3248  
1.5Gb (8-Meg X 48-Bit X 4-Banks) SDRAM  
Clock suspend mode: By driving CKE to Low during a bank-active or read/write operation, the SDRAM  
enters clock suspend mode. During clock suspend mode, external input signals are ignored and the internal  
state is maintained. When CKE is driven High, the SDRAM terminates clock suspend mode, and command  
input is enabled from the next clock. For more details, refer to the CKE Truth Table.  
Power-up sequence: The SDRAM should use the following sequence during power-up:  
The CLK, CKE, CS, DQM and DQ pins stay low until power stabilizes.  
The CLK pin is stable within 100ms after power stabilizes before the following initialization sequence.  
The CKE and DQM is driven high between when power stabilizes and the initialization sequence.  
This SDRAM has V clamp diodes for CLK, CKE, CS, DQM and DQ pins. If these pins go high before  
power up, the largeCcCurrent flows from these pins to V through the diodes.  
CC  
Initialization sequence: When 200ms or more has past after the power up sequence, all banks must be  
precharged using the precharge command (PALL). After tRP delay, set 8 or more auto refresh commands  
(REF). Set the mode register set command (MRS) to initialize the mode register. It is recommended that by  
keeping DQM and CKE High, the output buffer becomes High-Z during initialization sequence, to avoid DQ  
bus contention on a memory system formed with a number of devices.  
02.04.05 Rev 3  
All data sheets are subject to change without notice 37  
©2005 Maxwell Technologies  
All rights reserved.  

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