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93LC56A/SNRVA PDF预览

93LC56A/SNRVA

更新时间： 2024-02-18 20:51:26
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
12页 222K
描述
EEPROM, 256X8, Serial, CMOS, PDSO8

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中文翻译

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93LC56A/SNRVA 技术参数

生命周期：Active包装说明：SOP,
Reach Compliance Code：compliant风险等级：5.59
其他特性：1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS最大时钟频率 (fCLK)：2 MHz
数据保留时间-最小值：200JESD-30 代码：R-PDSO-G8
长度：4.9 mm内存密度：2048 bit
内存集成电路类型：EEPROM内存宽度：8
功能数量：1端子数量：8
字数：256 words字数代码：256
工作模式：SYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：256X8
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
并行/串行：SERIAL座面最大高度：1.75 mm
串行总线类型：MICROWIRE最大供电电压 (Vsup)：6 V
最小供电电压 (Vsup)：2.5 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
宽度：3.9 mm最长写入周期时间 (tWC)：6 ms
Base Number Matches：1

93LC56A/SNRVA 数据手册

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93LC56A/B  
TABLE 1-1  
Name  
PIN FUNCTION TABLE  
Function  
1.0  
ELECTRICAL  
CHARACTERISTICS  
CS  
CLK  
DI  
Chip Select  
1.1  
Maximum Ratings*  
Serial Data Clock  
Serial Data Input  
Serial Data Output  
Ground  
VCC...................................................................................7.0V  
All inputs and outputs w.r.t. Vss ...............-0.6V to Vcc +1.0V  
Storage temperature .....................................-65°C to +150°C  
Ambient temp. with power applied ................-65°C to +125°C  
Soldering temperature of leads (10 seconds) .............+300°C  
ESD protection on all pins................................................4 kV  
DO  
VSS  
NC  
No Connect  
VCC  
Power Supply  
*Notice: Stresses above those listed under “Maximum ratings” may  
cause permanent damage to the device. This is a stress rating only and  
functional operation of the device at those or any other conditions  
above those indicated in the operational listings of this specification is  
not implied. Exposure to maximum rating conditions for extended peri-  
ods may affect device reliability.  
TABLE 1-2  
DC AND AC ELECTRICAL CHARACTERISTICS  
All parameters apply over the specified Commercial (C): VCC = +2.5V to +6.0V  
Tamb = 0°C to +70°C  
operating ranges unless otherwise  
noted  
Industrial (I):  
VCC = +2.5V to +6.0V  
Tamb = -40°C to +85°C  
Parameter  
Symbol  
Min.  
Max.  
Units  
Conditions  
2.7V ≤ VCC ≤ 6.0V (Note 2)  
VCC < 2.7V  
VIH1  
VIH2  
VIL1  
VIL2  
VOL1  
VOL2  
VOH1  
VOH2  
ILI  
2.0  
0.7 Vcc  
-0.3  
-0.3  
—
Vcc +1  
Vcc +1  
0.8  
V
V
High level input voltage  
V
VCC > 2.7V (Note 2)  
VCC < 2.7V  
Low level input voltage  
Low level output voltage  
High level output voltage  
0.2 Vcc  
0.4  
V
V
IOL = 2.1 mA; Vcc = 4.5V  
IOL =100 µA; Vcc = Vcc Min.  
IOH = -400 µA; Vcc = 4.5V  
IOH = -100 µA; Vcc = Vcc Min.  
VIN = VSS  
—
0.2  
V
2.4  
—
V
Vcc-0.2  
-10  
—
V
Input leakage current  
Output leakage current  
10  
µA  
µA  
ILO  
-10  
10  
VOUT = VSS  
Pin capacitance  
(all inputs/outputs)  
VIN/VOUT = 0 V (Notes 1 & 2)  
Tamb = +25°C, Fclk = 1 MHz  
CIN, COUT  
ICC read  
—
—
7
pF  
1
500  
mA  
µA  
FCLK = 2 MHz; VCC = 6.0V  
FCLK = 1 MHz; VCC = 3.0V  
Operating current  
ICC write  
ICCS  
—
—
1.5  
1
mA  
µA  
Standby current  
Clock frequency  
CS = VSS; DI = VSS  
2
1
MHz  
MHz  
VCC > 4.5V  
VCC < 4.5V  
FCLK  
—
Clock high time  
TCKH  
TCKL  
TCSS  
TCSH  
TCSL  
TDIS  
TDIH  
TPD  
TCZ  
250  
250  
50  
—
—
ns  
ns  
Clock low time  
Chip select setup time  
Chip select hold time  
Chip select low time  
Data input setup time  
Data input hold time  
Data output delay time  
Data output disable time  
Status valid time  
—
ns  
Relative to CLK  
Relative to CLK  
0
—
ns  
250  
100  
100  
—
—
ns  
—
ns  
Relative to CLK  
—
ns  
Relative to CLK  
400  
100  
500  
6
ns  
Cl = 100 pF  
—
ns  
Cl = 100 pF (Note 2)  
Cl = 100 pF  
TSV  
—
ns  
TWC  
TEC  
—
ms  
ms  
ms  
cycles  
ERASE/WRITE mode  
ERAL mode  
Program cycle time  
—
6
TWL  
—
—
15  
—
WRAL mode  
Endurance  
1M  
25°C, VCC = 5.0V, Block Mode (Note 3)  
Note 1: This parameter is tested at Tamb = 25°C and FCLK = 1 MHz.  
2: This parameter is periodically sampled and not 100% tested.  
3: This application is not tested but guaranteed by characterization. For endurance estimates in a specific application, please consult the Total  
Endurance Model which may be obtained on our website.  
DS21208C-page 2  
1998 Microchip Technology Inc.  
1234567...12

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