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93LC56A/SNRVA PDF预览

93LC56A/SNRVA

更新时间: 2024-02-14 19:33:15
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
12页 222K
描述
EEPROM, 256X8, Serial, CMOS, PDSO8

93LC56A/SNRVA 技术参数

生命周期:Active包装说明:SOP,
Reach Compliance Code:compliant风险等级:5.59
其他特性:1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS最大时钟频率 (fCLK):2 MHz
数据保留时间-最小值:200JESD-30 代码:R-PDSO-G8
长度:4.9 mm内存密度:2048 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256X8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL座面最大高度:1.75 mm
串行总线类型:MICROWIRE最大供电电压 (Vsup):6 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:3.9 mm最长写入周期时间 (tWC):6 ms
Base Number Matches:1

93LC56A/SNRVA 数据手册

 浏览型号93LC56A/SNRVA的Datasheet PDF文件第3页浏览型号93LC56A/SNRVA的Datasheet PDF文件第4页浏览型号93LC56A/SNRVA的Datasheet PDF文件第5页浏览型号93LC56A/SNRVA的Datasheet PDF文件第7页浏览型号93LC56A/SNRVA的Datasheet PDF文件第8页浏览型号93LC56A/SNRVA的Datasheet PDF文件第9页 
93LC56A/B  
3.6  
ERASE/WRITE Disable and Enable  
(EWDS/EWEN)  
3.7  
READ  
The READ instruction outputs the serial data of the  
addressed memory location on the DO pin. A dummy  
zero bit precedes the 8-bit (93LC56A) or 16-bit  
(93LC56B) output string. The output data bits will tog-  
gle on the rising edge of the CLK and are stable after  
the specified time delay (TPD). Sequential read is pos-  
sible when CS is held high. The memory data will auto-  
matically cycle to the next register and output  
sequentially.  
The 93LC56A/B powers up in the ERASE/WRITE  
Disable (EWDS) state. All programming modes must  
be preceded by an ERASE/WRITE Enable (EWEN)  
instruction. Once the EWEN instruction is executed,  
programming remains enabled until an EWDS instruc-  
tion is executed or VCC is removed from the device. To  
protect against accidental data disturbance, the EWDS  
instruction can be used to disable all ERASE/WRITE  
functions and should follow all programming opera-  
tions. Execution of a READ instruction is independent  
of both the EWDS and EWEN instructions.  
FIGURE 3-4: EWDS TIMING  
TCSL  
CS  
CLK  
•••  
1
0
0
0
0
X
X
DI  
FIGURE 3-5: EWEN TIMING  
TCSL  
CS  
CLK  
•••  
1
0
0
1
1
X
X
DI  
FIGURE 3-6: READ TIMING  
CS  
CLK  
DI  
An  
•••  
A0  
0
1
1
0
HIGH-Z  
DO  
Dx  
D0  
Dx  
D0  
Dx  
D0  
•••  
•••  
•••  
DS21208C-page 6  
1998 Microchip Technology Inc.  

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