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93LC56AB PDF预览

93LC56AB

更新时间： 2024-01-24 09:09:38
品牌 Logo 应用领域
美国微芯 - MICROCHIP 微波可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
12页 163K
描述
2K 2.5V Microwave Serial EEPROM

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中文翻译

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93LC56AB 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Not Recommended零件包装代码：SOIC
包装说明：0.150 INCH, PLASTIC, SOIC-8针数：8
Reach Compliance Code：compliant风险等级：5.17
Is Samacsys：N其他特性：100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS
备用内存宽度：8最大时钟频率 (fCLK)：2 MHz
数据保留时间-最小值：200耐久性：10000000 Write/Erase Cycles
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
长度：4.9 mm内存密度：2048 bit
内存集成电路类型：EEPROM内存宽度：16
湿度敏感等级：1功能数量：1
端子数量：8字数：128 words
字数代码：128工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：128X16输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE并行/串行：SERIAL
峰值回流温度（摄氏度）：260电源：3/5 V
认证状态：Not Qualified座面最大高度：1.75 mm
串行总线类型：MICROWIRE最大待机电流：0.00003 A
子类别：EEPROMs最大压摆率：0.003 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：2.5 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40宽度：3.9 mm
最长写入周期时间 (tWC)：10 ms写保护：SOFTWARE
Base Number Matches：1

93LC56AB 数据手册

 浏览型号93LC56AB的Datasheet PDF文件第1页浏览型号93LC56AB的Datasheet PDF文件第2页浏览型号93LC56AB的Datasheet PDF文件第3页浏览型号93LC56AB的Datasheet PDF文件第5页浏览型号93LC56AB的Datasheet PDF文件第6页浏览型号93LC56AB的Datasheet PDF文件第7页 
93LC56A/B  
3.2  
DATA IN (DI) AND DATA OUT (DO)  
3.0  
FUNCTIONAL DESCRIPTION  
Instructions, addresses and write data are clocked into  
the DI pin on the rising edge of the clock (CLK).The DO  
pin is normally held in a HIGH-Z state except when  
reading data from the device, or when checking the  
READY/BUSY status during a programming operation.  
The READY/BUSY status can be verified during an  
ERASE/WRITE operation by polling the DO pin; DO  
low indicates that programming is still in progress, while  
DO high indicates the device is ready.The DO will enter  
the HIGH-Z state on the falling edge of the CS.  
It is possible to connect the Data In (DI) and Data Out  
(DO) pins together. However, with this configuration, if  
A0 is a logic-high level, it is possible for a “bus conflict”  
to occur during the “dummy zero” that precedes the  
READ operation. Under such a condition, the voltage  
level seen at DO is undefined and will depend upon the  
relative impedances of DO and the signal source driv-  
ing A0.The higher the current sourcing capability of A0,  
the higher the voltage at the DO pin.  
3.3  
Data Protection  
3.1  
START Condition  
During power-up, all programming modes of operation  
are inhibited until Vcc has reached a level greater than  
2.2V. During power-down, the source data protection  
circuitry acts to inhibit all programming modes when  
Vcc has fallen below 2.2V at nominal conditions.  
The START bit is detected by the device if CS and DI  
are both high with respect to the positive edge of CLK  
for the first time.  
Before a START condition is detected, CS, CLK, and DI  
may change in any combination (except to that of a  
START condition), without resulting in any device oper-  
ation (ERASE, ERAL, EWDS, EWEN, READ, WRITE,  
and WRAL). As soon as CS is high, the device is no  
longer in the standby mode.  
The EWDS and EWEN commands give additional pro-  
tection against accidentally programming during  
normal operation.  
After power-up, the device is automatically in the  
EWDS mode. Therefore, an EWEN instruction must be  
performed before any ERASE or WRITE instruction can  
be executed.  
An instruction following a START condition will only be  
executed if the required amount of opcode, address  
and data bits for any particular instruction is clocked in.  
After execution of an instruction (i.e., clock in or out of  
the last required address or data bit) CLK and DI  
become don't care bits until a new START condition is  
detected.  
FIGURE 3-1: SYNCHRONOUS DATA TIMING  
VIH  
CS  
TCSS  
TCKH  
TCKL  
VIL  
TCSH  
VIH  
CLK  
DI  
VIL  
TDIS  
TDIH  
VIH  
VIL  
TCZ  
TPD  
TPD  
VOH  
DO  
(READ)  
TCZ  
VOL  
VOH  
TSV  
DO  
(PROGRAM)  
STATUS VALID  
VOL  
Note: AC Test Conditions: VIL = 0.4V, VIH - 2.4V.  
DS21208A-page 4  
Preliminary  
1997 Microchip Technology Inc.  
1234567...12

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