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93LC46CXT-I/STG PDF预览

93LC46CXT-I/STG

更新时间: 2024-01-17 14:18:09
品牌 Logo 应用领域
美国微芯 - MICROCHIP 内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
24页 388K
描述
1K Microwire Compatible Serial EEPROM

93LC46CXT-I/STG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:9 weeks
风险等级:5.24Is Samacsys:N
其他特性:3 WIRE INTERFACE; AUTOMATIC WRITE; ERAL AT 4.5V TO 6.0V备用内存宽度:8
最大时钟频率 (fCLK):2 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
内存密度:1024 bit内存集成电路类型:EEPROM
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:8
字数:64 words字数代码:64
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:64X16
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:3/5 V
认证状态:Not Qualified座面最大高度:1.75 mm
串行总线类型:MICROWIRE最大待机电流:0.00003 A
子类别:EEPROMs最大压摆率:0.003 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3.9 mm
最长写入周期时间 (tWC):10 ms写保护:SOFTWARE
Base Number Matches:1

93LC46CXT-I/STG 数据手册

 浏览型号93LC46CXT-I/STG的Datasheet PDF文件第5页浏览型号93LC46CXT-I/STG的Datasheet PDF文件第6页浏览型号93LC46CXT-I/STG的Datasheet PDF文件第7页浏览型号93LC46CXT-I/STG的Datasheet PDF文件第9页浏览型号93LC46CXT-I/STG的Datasheet PDF文件第10页浏览型号93LC46CXT-I/STG的Datasheet PDF文件第11页 
93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C  
2.6  
ERASE/WRITE DISABLE And ENABLE (EWDS/EWEN)  
The 93XX46A/B/C powers up in the ERASE/WRITE  
Disable (EWDS) state. All Programming modes must be  
preceded by an ERASE/WRITE Enable (EWEN)  
instruction. Once the EWEN instruction is executed,  
programming remains enabled until an EWDSinstruction is  
executed or Vcc is removed from the device.  
To protect against accidental data disturbance, the EWDS  
instruction can be used to disable all ERASE/WRITE  
functions and should follow all programming operations.  
Execution of a READinstruction is independent of both the  
EWENand EWDSinstructions.  
FIGURE 2-5:  
EWDS TIMING  
TCSL  
CS  
CLK  
DI  
•••  
X
1
0
0
0
0
X
FIGURE 2-6:  
EWEN TIMING  
TCSL  
CS  
CLK  
DI  
•••  
1
0
0
1
1
X
X
the rising edge of the CLK and are stable after the  
specified time delay (TPD). Sequential read is possible  
when CS is held high. The memory data will  
automatically cycle to the next register and output  
sequentially.  
2.7  
READ  
The READ instruction outputs the serial data of the  
addressed memory location on the DO pin. A dummy  
zero bit precedes the 8-bit (If ORG pin is low or A-Version  
devices) or 16-bit (If ORG pin is high or B-version  
devices) output string. The output data bits will toggle on  
FIGURE 2-7:  
READ TIMING  
CS  
CLK  
DI  
•••  
A0  
0
An  
1
1
0
HIGH-Z  
DO  
Dx  
D0  
Dx  
D0  
Dx  
D0  
•••  
•••  
•••  
DS21749D-page 8  
2003 Microchip Technology Inc.  

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