M
93LC46/56/66
®
1K/2K/4K 2.0V Microwire Serial EEPROM
FEATURES
BLOCK DIAGRAM
VCC
VSS
• Single supply with programming operation down
to 2.0V (Commercial only)
• Low power CMOS technology
- 1 mA active current typical
ADDRESS
DECODER
MEMORY
ARRAY
- 5 µA standby current (typical) at 3.0V
• ORG pin selectable memory configuration
- 128 x 8 or 64 x 16-bit organization (93LC46)
- 256 x 8 or 128 x 16-bit organization(93LC56)
- 512 x 8 or 256 x 16-bit organization(93LC66)
• Self-timed ERASE and WRITE cycles
(including auto-erase)
ADDRESS
COUNTER
OUTPUT
BUFFER
DATA REGISTER
DO
DI
• Automatic ERAL before WRAL
MODE
DECODE
LOGIC
• Power on/off data protection circuitry
• Industry standard 3-wire serial I/O
• Device status signal during ERASE/WRITE cycles
• Sequential READ function
• 10,000,000 ERASE/WRITE cycles guaranteed on
93LC56 and 93LC66
CS
CLOCK
GENERATOR
CLK
• 1,000,000 E/W cycles guaranteed on 93LC46
• Data retention > 200 years
DESCRIPTION
• 8-pin PDIP/SOIC and 14-pin SOIC package
(SOIC in JEDEC and EIAJ standards)
• Temperature ranges supported
The Microchip Technology Inc. 93LC46/56/66 are 1K,
2K, and 4K low-voltage serial Electrically Erasable
PROMs.The device memory is configured as x8 or x16
bits, depending on the ORG pin setup. Advanced
CMOS technology makes these devices ideal for
low-power, nonvolatile memory applications. The
93LC46/56/66 is available in standard 8-pin DIP and 8/
14-pin surface mount SOIC packages. The 93LC46X/
56X/66X are only offered in an “SN” package.
- Commercial (C):
- Industrial (I):
0°C to +70°C
-40°C to +85°C
PACKAGE TYPES
SOIC
1
2
3
4
14
13
12
11
NC
Vcc
NU
NC
CS
DIP
SOIC
SOIC
CLK
NC
DI
1
8
CS
CLK
DI
VCC
NU
1
8
7
6
5
1
2
3
4
8
7
6
5
ORG
VSS
DO
DI
VCC
NU
NU
VCC
CS
CS
NC
ORG
VSS
2
3
4
7
6
5
2
5
6
7
10
9
CLK
3
ORG
VSS
ORG
VSS
DO
NC
DI
8
4
DO
CLK
DO
NC
1997 Microchip Technology Inc.
DS11168L-page 1